POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET ?TRANSISTORS THRU-HOLE - TO-205AF (TO-39) The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low

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高可靠性功率 MOSFET

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Infineon

英飛凌

POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET ?TRANSISTORS THRU-HOLE - TO-205AF (TO-39) The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low

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IRF

Repetitive Avalanche Ratings

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REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET? TRANSISTOR The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface mount technology. Desinged to be a close replacement for the TO-39 package, the LCC will give designers the extra flexibility the

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