High-Reliability Transistors

Microchip

微芯科技

SOA is power-dissipation limited

DESCRIPTION ? SOA is power-dissipation limited ? Nanosecond switching speeds ? Linear transfer characteristics ? High input impedance ? Majority carrier device APPLICATIONS ? The 2N6898 is designed for application such as switching regulators,switching converters,motor drivers, relay driver

文件：47.52 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

P-Ch. Enhancement Mode Power MOS Field Effect Transistor

DESCRIPTION The 2N6898 is a P-channel enchancement-mode silicon-gate power MOS field-effect transisotr designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low g

文件：1.00603 Mbytes 頁數(shù)：4 Pages

AMERICASEMI

POWER MOS FIELD-EFFECT TRANSISTORS

Power MOS Field-Effect Transistors P-Channel Enhancement-Mode Power MOS Field-Effect Transistors DESCRIPTION ■ SOA is power-dissipation limited ■ Nanosecond switching speeds ■ Linear transfer characteristics ■ High input impedance ■ Majority carrier device

文件：284.97 Kbytes 頁數(shù)：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司