This family of high-frequency, epitaxial planar transistors feature low saturation voltage.

NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/368

文件：312.18 Kbytes 頁數(shù)：6 Pages

MICROSEMI

美高森美

NPN LOW POWER SILICON TRANSISTOR

NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/368

文件：312.18 Kbytes 頁數(shù)：6 Pages

MICROSEMI

美高森美

NPN LOW POWER TRANSISTORS - 1

KEY FEATURES ■ JAN/JANTX/JANTXV STANDARD PRODUCTS ■ QUALIFIED PER MIL-PRF-19500/368 ■ LOW ON RESISTANCE ■ FAST SWITCHING ■ HIGH OFF ISOLATION ■ SECOND SOURCE FOR MICROSEMI ■ DESIGNED FOR HIGH-VOLTAGE LOW CURRENT INVERTERS & HIGH FREQUENCY SWITCHING WITH SMALL PACKAGE

文件：136.27 Kbytes 頁數(shù)：2 Pages

SOLITRON

Transistor GP BJT NPN 3-Pin 350V, 1A, 800mW TO-39 Bag

This family of 2N3439 through 2N3440, high-frequency, epitaxial planar NPN transistors have a low saturation voltage, and are military qualified up to the JANS level for high-reliability applications. These transistors are available in a TO-205AD (TO-39) ,no suffix, a TO-205AA (TO-5), L suffix and JEDEC registered 2N3439 through 2N3440 series.JANHC, JANKC, JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/368\nRoHS compliant versions available (commercial grade only)\nVCE(sat) = 0.5 V @ IC = 50 mA\nTurn-On time ton = 1.0 μs max @ IC = 20 mA, IB1 = 2.0 mA\nTurn-Off ti;

Microchip

微芯科技

Package：TO-205AD，TO-39-3 金屬罐；包裝：散裝 類別：分立半導體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 350V 1A TO39

MICROCHIP

微芯科技

NPN LOW POWER SILICON TRANSISTOR

NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/368

文件：312.18 Kbytes 頁數(shù)：6 Pages

MICROSEMI

美高森美

NPN LOW POWER SILICON TRANSISTOR

NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/368

文件：312.18 Kbytes 頁數(shù)：6 Pages

MICROSEMI

美高森美

NPN Silicon Low-Power 250V to 350V, 1A

This specification covers the performance requirements for NPN, silicon, low-power, high voltage 2N3439, 2N3439L, 2N3439UA, 2N3439U4, 2N3439UB, 2N3440, 2N3440L, 2N3440UA, 2N3440U4 and 2N3440UB transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsula The device package for the encapsulated device type are as follows: Three terminal round metal can modified TO-205AA (formerly similar to TO-5) and modified TO-205-AD (formerly similar to TO-39) , surface mount version (UA) and surface mount version (U4) and surface mount version (UB, UBC). \nThe di;

Microchip

微芯科技

Transistor GP BJT NPN 3-Pin 350V, 1A, 800mW Case U4 Tray

This family of 2N3439 through 2N3440, high-frequency, epitaxial planar NPN transistors have a low saturation voltage, and are military qualified up to the JANS level for high-reliability applications. These transistors are available in a TO-205AD (TO-39) ,no suffix, a TO-205AA (TO-5), L suffix and JEDEC registered 2N3439 through 2N3440 series.JANHC, JANKC, JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/368\nRoHS compliant versions available (commercial grade only)\nVCE(sat) = 0.5 V @ IC = 50 mA\nTurn-On time ton = 1.0 μs max @ IC = 20 mA, IB1 = 2.0 mA\nTurn-Off ti;

Microchip

微芯科技

Package：TO-205AD，TO-39-3 金屬罐；包裝：散裝 類別：分立半導體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：POWER BJT

MICROCHIP

微芯科技