Silicon P Channel MOS FET High Speed Power Switching

Features ? Low on-resistance RDS(on) = 0.075? typ. ? Low drive current. ? 4V gate drive devices. ? High speed switching.

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HITACHIHitachi Semiconductor

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Silicon P Channel MOS FET

Description High speed power switching Features ? Low on-resistance RDS (on) = 0.075 ? typ. ? Low drive current. ? 4 V gate drive devices. ? High speed switching.

文件：95.64 Kbytes 頁(yè)數(shù)：9 Pages

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NPN general purpose transistors

DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: JC559 and JC560. FEATURES ? Low current (max. 100 mA) ? Low voltage (max. 45 V). APPLICATIONS ? General purpose switching and amplification ? Low noise stages in tape recorders, hi-fi amplifiers and other audio-

文件：53.16 Kbytes 頁(yè)數(shù)：8 Pages

PHI

PHI

NPN general purpose transistors

DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: JC559 and JC560. FEATURES ? Low current (max. 100 mA) ? Low voltage (max. 45 V). APPLICATIONS ? General purpose switching and amplification ? Low noise stages in tape recorders, hi-fi amplifiers and other audio-

文件：53.16 Kbytes 頁(yè)數(shù)：8 Pages

PHI

PHI

NPN general purpose transistors

DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: JC559 and JC560. FEATURES ? Low current (max. 100 mA) ? Low voltage (max. 45 V). APPLICATIONS ? General purpose switching and amplification ? Low noise stages in tape recorders, hi-fi amplifiers and other audio-

文件：53.16 Kbytes 頁(yè)數(shù)：8 Pages

PHI

PHI