TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Current Resonance Inverter Switching Application

Current Resonance Inverter Switching Application ? Enhancement mode type ? High speed : tf = 0.19 μs (typ.) (IC = 50A) ? Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 50A) ? FRD included between emitter and collector ? Fourth generation IGBT ? TO-3P(N) (Toshiba package name)

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TOSHIBA

東芝

Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS??

○ Power Management Switch Applications ? 1.5-V drive ? Low ON-resistance: RDS(ON) = 242 m? (max) (@VGS = -1.5 V) RDS(ON) = 170 m? (max) (@VGS = -1.8 V) RDS(ON) = 125 m? (max) (@VGS = -2.5 V)

文件：192.52 Kbytes 頁數：6 Pages

TOSHIBA

東芝

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

文件：347.1 Kbytes 頁數：6 Pages

NEC

瑞薩

TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)

文件：232.15 Kbytes 頁數：6 Pages

TOSHIBA

東芝