PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated

N-Channel Enhancement Mode Avalanche Rated Features l Fast Recovery diode l Unclamped Inductive Switching (UIS) rated l International standard packages l Low package inductance - easy to drive and to protect

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IXYS

艾賽斯

N-Channel: Standard Power MOSFETs

·Breakdown voltages (VDSS) up to 4500V\n·Current ratings (ID25) ranging from 100mA to 250A\n·Ultra-low RDS(on) - as low as 7.5 milliohm\n·High power density\n·Easy to mount\n·PCB space savings\n·International standard and proprietary high voltage packages\n;

Littelfuse

力特

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

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INFINEON

英飛凌

HIGH SPEED IGBT IN NPT-TECHNOLOGY

High Speed IGBT in NPT-technology ? 30 lower Eoff compared to previous generation ? Short circuit withstand time – 10 μs ? Designed for operation above 30 kHz ? NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature -

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INFINEON

英飛凌

High speed switching

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KEC

KEC(Korea Electronics)