High Voltage MOSFET

High Voltage MOSFET N-Channel, Enhancement Mode Features ? International standard packages JEDEC TO-251 AA, TO-252 AA ? Low RDS (on) HDMOSTM process ? Rugged polysilicon gate cell structure ? Fast switching times Applications ? Level shifting ? Triggers ? Solid state relays ? Current re

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IXYS

艾賽斯

N-Channel: Standard Power MOSFETs

·Breakdown voltages (VDSS) up to 4500V\n·Current ratings (ID25) ranging from 100mA to 250A\n·Ultra-low RDS(on) - as low as 7.5 milliohm\n·High power density\n·Easy to mount\n·PCB space savings\n·International standard and proprietary high voltage packages;

Littelfuse

力特

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=0.1A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance -RDS(on) =50Ω(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

無(wú)錫固電

High Voltage MOSFET

High Voltage MOSFET N-Channel, Enhancement Mode Features ? International standard packages JEDEC TO-251 AA, TO-252 AA ? Low RDS (on) HDMOSTM process ? Rugged polysilicon gate cell structure ? Fast switching times Applications ? Level shifting ? Triggers ? Solid state relays ? Current re

文件：68.38 Kbytes 頁(yè)數(shù)：2 Pages

IXYS

艾賽斯