Polar VHVTM Power MOSFET N-Channel Enhancement Mode

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IXYS

艾賽斯

N-Channel Enhancement Mode Power MOSFET

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IXYS

艾賽斯

N通道標(biāo)準(zhǔn) Polar? MOSFET

? 國際標(biāo)準(zhǔn)包裝 \n? 動態(tài)dv/dt評級\n? 較低的RDS(on)和Qg\n? 雪崩評級\n? 較低的封裝電感;

Littelfuse

力特

TMOS POWER FET 3.0 AMPERES 1000 VOLTS

The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination s

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MOTOROLA

摩托羅拉

High Energy Power FET

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ONSEMI

安森美半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3A@ TC=25℃ ·Drain Source Voltage -VDSS= 1000V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

無錫固電