MegaMOSFET

N-Channel Enhancement Mode Features ● International standard packages ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Low package inductance (

文件：98.75 Kbytes 頁數(shù)：4 Pages

IXYS

艾賽斯

N-Channel: Standard Power MOSFETs

·Breakdown voltages (VDSS) up to 4500V\n·Current ratings (ID25) ranging from 100mA to 250A\n·Ultra-low RDS(on) - as low as 7.5 milliohm\n·High power density\n·Easy to mount\n·PCB space savings\n·International standard and proprietary high voltage packages;

Littelfuse

力特

800V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor?’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

文件：731.59 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

800V N-Channel MOSFET

文件：830.55 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

800V N-Channel MOSFET

文件：833.88 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體