Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated

Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated Features ? International standard package JEDEC TO-247 AD ? Low RDS (on) HDMOSTM process ? Rugged polysilicon gate cell structure ? Unclamped Inductive Switching (UIS) rated ? Low package inductance (

文件：75.09 Kbytes 頁數(shù)：2 Pages

IXYS

艾賽斯

P-Channel: Standard Power MOSFETs

·BVDSS= -85V, -100V, -150V, -200V, -500 and -600V \n·ID(25): -8A to -52A \n·TO-220, TO-247, TO-263, TO-3P, TO-268 case style \n·Rugged, square SOA\n·Rugged PolarP Process\n·Low Gate Charge (Qg) for simple drive requirement\n·Low Package Inductance (Easy to drive and protect)\n·High Power Dissipation;

Littelfuse

力特

iscN-Channel MOSFET Transistor

文件：332.87 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 頁數(shù)：73 Pages

TOSHIBA

東芝

Switching Regulator Applications

文件：212.9 Kbytes 頁數(shù)：6 Pages

TOSHIBA

東芝