N-Channel Enhancement Mode

MegaMOS? FET N-Channel Enhancement Mode Features ? International standard packages ? Low RDS (on) HDMOSTM process ? Rugged polysilicon gate cell structure ? Low package inductance (

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isc N-Channel MOSFET Transistor

? FEATURES ? Drain Source Voltage- : VDSS= 100V(Min) ? Static drain-source on-resistance : RDS(on) ≤ 20m?@VGS=10V ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATION ? DC/DC Converter ? Ideal for high-frequency switching

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N-Channel: Standard Power MOSFETs

·Breakdown voltages (VDSS) up to 4500V\n·Current ratings (ID25) ranging from 100mA to 250A\n·Ultra-low RDS(on) - as low as 7.5 milliohm\n·High power density\n·Easy to mount\n·PCB space savings\n·International standard and proprietary high voltage packages;

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MegaMOSFET

N-Channel Enhancement Mode Features ? International standard packages ? Low RDS(on) HDMOS? process ? Rugged polysilicon gate cell structure ? Low package inductance (

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MegaMOS FET

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isc N-Channel MOSFET Transistor

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