isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 17mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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HiPerFET MOSFET ISOPLUS220

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N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET?)

·The IXYS most popular Power MOSFETs (HiPerFET?) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. Available in many standard industrial packages including isolated types;

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HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

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IXYS

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HIPERFET Power MOSFTETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

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IXYS

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HiPerFET Power MOSFETs

HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Features ? Low profile, high power package ? Long creep and strike distances ? Easy up-grade path for TO-220 designs ? Low RDS (on) HDMOSTM process ? Rugged polysilicon gate cell structure ? Unclamped In

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IXYS

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