Polar HiPerFET Power MOSFET

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Features ● International Standard Packages ● Dynamic dv/dt Rating ● Avalanche Rated ● Fast Intrinsic Rectifier ● Low QG Applications ● DC-DC Converters ● Battery Chargers ● Switch-Mode and Resonant-Mode Power Supplies

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PolarHV HiPerFET Power MOSFET

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features ● International standard packages ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect Advantages ● Easy to mount ● Space savings ● High power density

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 7A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.44Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

無錫固電

Power MOSFET

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Power MOSFET

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N通道HiPerFET MOSFET

? 國際標準包裝\n? 動態(tài)dv/dt額定值\n? 雪崩評級\n? 快速本征整流器\n? 較低的QG和RDS(on)\n? 較低的漏極至彈片電容\n? 較低的封裝電感;

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