HiPerFET Power MOSFETs

Features ● International standard package ● Low RDS(on) ● Rated for unclamped Inductive load Switching (UIS) Advantages ● Easy to mount ● Space savings ● High power density

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IXYS

艾賽斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 3.6A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.6Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

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ISC

無錫固電

N-Channel: Power MOSFETs with Fast Intrinsic Diode (HiPerFET?)

·The IXYS most popular Power MOSFETs (HiPerFET?) for both hard switching and resonant mode applications, offering Low gate charge and excellent ruggedness with a fast intrinsic diode. Available in many standard industrial packages including isolated types;

Littelfuse

力特

HiPerFET Power MOSFETs

Features ● International standard package ● Low RDS(on) ● Rated for unclamped Inductive load Switching (UIS) Advantages ● Easy to mount ● Space savings ● High power density

文件：100.19 Kbytes 頁數(shù)：2 Pages

IXYS

艾賽斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3.6A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and PFC Circuits..

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ISC

無錫固電

N CHANNEL MOS FIELD

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and switching mode power supplies. FEATURES ? VDSS= 800V, ID= 2.7A ? Drain-S

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KEC

KEC(Korea Electronics)