BiMOSFETTM Monolithic Bipolar MOS Transistor High Voltage, High Frequency

Features ● Silicon Chip on Direct-Copper Bond (DCB) Substrate ● Isolated Mounting Surface ● 4000V~ Electrical Isolation ● High Blocking Voltage ● High Frequency Operation Advantages ● Low Gate Drive Requirement ● High Power Density Applications ● Switch-Mode and Resonant-Mode Power Suppl

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IXYS

艾賽斯

BiMOSFET? 超高電壓

? “自由”本征體二極管\n? 高功率密度\n? 高頻運行\(zhòng)n? 低傳導(dǎo)損耗\n? MOS柵極開啟簡單便捷\n? 4000V電氣絕緣;

Littelfuse

力特

Package：i4-Pac?-5（3 引線）；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 3600V 70A 290W I4-PAK

IXYS

艾賽斯

BiMOSFET Monolithic Bipolar MOS Transistor High Voltage, High Frequency

Features ● High Blocking Voltage ● High Voltage Package ● Low Conduction Losses Advantages ● Easy to Mount ● Space Savings ● High Power Density Applications ● Uninterruptible Power Supplies (UPS) ● Switch-Mode and Resonant-Mode Power Supplies ● Capacitor Discharge Circuits ● Laser Gene

文件：241.63 Kbytes 頁數(shù)：6 Pages

IXYS

艾賽斯