N-Channel MOSFET Transistor

? DESCRIPTION ? High peak current capability ? Ultra low gate charge ? Ultra low effective capacitances ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤0.9? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performa

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ISC

無錫固電

Cool MOS??Power Transistor

Cool MOS? Power Transistor Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances ? Improved transconductance ? P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

文件：254.15 Kbytes 頁數(shù)：12 Pages

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Cool MOS??Power Transistor

文件：681.15 Kbytes 頁數(shù)：13 Pages

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英飛凌

CoolMOSTM Power Transistor

Features ? New revolutionary high voltage technology ? Extreme dv/dt rated ? High peak current capability ? Qualified according to JEDEC1) for target applications ? Pb-free lead plating; RoHS compliant ? Ultra low gate charge ? Ultra low effective capacitances ? Fully isolated package (250

文件：375.52 Kbytes 頁數(shù)：10 Pages

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英飛凌