N-Channel MOSFET Transistor

? DESCRIPTION ? Ultra low gate charge ? High peak current capability ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤0.75? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：339.24 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

CoolMOSTM Power Transistor

文件：227.83 Kbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

CoolMOS Power Transistor

CoolMOS Power Transistor Features ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? High peak current capability ? Ultra low effective capacitances ? Extreme dv/dtrated ? Improved transconductance ? Fully isolated packag

文件：202.31 Kbytes 頁數(shù)：10 Pages

INFINEON

英飛凌

Isc N-Channel MOSFET Transistor

? FEATURES ? With TO-220F package ? Low input capacitance and gate charge ? Low gate input resistance ? Reduced switching and conduction losses ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching applica

文件：260.769 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電