N-Channel MOSFET Transistor

? DESCRIPTION ? Ultra low gate charge ? Ultra low effective capacitance ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤3? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：338.47 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Cool MOS Power Transistor

Features ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances ? Qualified according to JEDEC0) for target applications

文件：551.02 Kbytes 頁數(shù)：12 Pages

INFINEON

英飛凌

Cool MOS Power Transistor

Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances

文件：282.69 Kbytes 頁數(shù)：12 Pages

INFINEON

英飛凌

Isc N-Channel MOSFET Transistor

? FEATURES ? With To-263(D2PAK) package ? Low input capacitance and gate charge ? Low gate input resistance ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching applications

文件：189.48 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電