絲?。?a target="_blank" title="Marking" href="/dpak/marking.html">DPAK；Package：TO-252；N-Channel MOSFET Transistor

? DESCRITION ? Improved transconductance ? FEATURES ? Static drain-source on-resistance: RDS(on)≤600m? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

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New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

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Cool MOS??Power Transistor

Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances ? Improved transconductance ? PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) ? Pb-free lead plating; RoHS comp

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英飛凌

Isc N-Channel MOSFET Transistor

? FEATURES ? Drain Current ID= 7.6A@ TC=25℃ ? Drain Source Voltage- : VDSS=500V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 0.6Ω (Max) ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching

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