ISP847X - 光電耦合器, Transistor Output, 4通道, DIP, 16 引腳, 50 mA, 5.3 kV, 50 %

The ISP847X is a 4-channel 16-pin high density mounting Optically Coupled Isolator consists of infrared light emitting diodes and NPN silicon phototransistors. It is suitable for industrial systems controllers, signal transmission between systems of different potentials and impedances. ·All electrical parameters 100% tested\n·35V Minimum high BVCEO\n·50mA Forward current\n·6V Reverse voltage\n·200mW Total power dissipation;

ISOCOM

英國(guó)安數(shù)光

HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS

[Isocom] DESCRIPTION The ISP817, ISP827 and ISP847 series of optically coupled isolator consist of an infrared light emitting diode and an NPN silicon photo transistor in a space efficient Dual In Line Plastic Package. FEATURES ? AC Isolation Voltage 5300VRMS ? CTR Selections Available ? Wid

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ETCList of Unclassifed Manufacturers

未分類(lèi)制造商

Package：16-SMD，鷗翼；包裝：管件 類(lèi)別：隔離器 光隔離器 - 晶體管，光電輸出 描述：OPTOISO 5.3KV 4CH TRANS 16SMD

Isocom Components 2004 LTD

Multichannel Optocoupler with Phototransistor Output

Description The K827P and K847P consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 8-lead, resp. 16-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between inpu

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TELEFUNKEN

Optocoupler, Phototransistor Output

Description In the K817P/ K827PH/ K847PH parts each channel consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-pin (single); 8 pin (dual); 16-pin (quad) plastic dual inline package. The elements are mounted on one leadframe providing a fixed d

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VISHAYVishay Siliconix

威世威世科技公司

GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES

DESCRIPTION 1. The KB847 (4-channel) is optically coupled isolators containing a GaAS light emitting diode and an NPN silicon phototransistor. 2. The lead pitch is 2.54mm. 3. Solid insulation thickness between emitting diode and output phototransistor:>=0.6mm. FEATURES 1. High isolation volta

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KINGBRIGHT

今臺(tái)電子