Galvanic isolated octal high-side power solid state relay for high inductive loads

Features ? VCC(AMR) = 45 V ? Wide process side op. range VCC = 9.2 to 36 V ? RDS(on) = 0.125 Ω per channel (TYP) ? Fast demagnetization of inductive loads VDEMAG(TYP) = VCC - 54 V ? Per channel process side op. current – ISO808 IOUT

文件：1.73599 Mbytes 頁數(shù)：38 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Isolated 12-Bit Sampling ANALOG-TO-DIGITAL CONVERTER

文件：171 Kbytes 頁數(shù)：7 Pages

BURR-BROWN

用于高感性負(fù)載的電流隔離8通道高側(cè)電源固態(tài)繼電器

\n\n ISO808和ISO808-1是兩款電流隔離8通道驅(qū)動(dòng)器，具有低供電電流。每個(gè)驅(qū)動(dòng)器包含兩個(gè)獨(dú)立的電流隔離型電壓域（VCC和VDD），分別用于處理級(jí)和控制邏輯級(jí)。這些IC用于驅(qū)動(dòng)任何一側(cè)接地的負(fù)載。\n\n\n\n 每個(gè)通道都有獨(dú)立的有源電流限制 (OVL) 和熱關(guān)斷 (OVT)，可以保護(hù)器件，防止過載。\n\n\n\n 內(nèi)置的熱關(guān)斷可以保護(hù)每個(gè)通道免受過溫和過載：每個(gè)過熱通道都會(huì)在其結(jié)溫觸發(fā)保護(hù)閾值 (TJSD) 后自動(dòng)關(guān)閉。如果其結(jié)溫降低至重啟閾值 (TJR) 以下，則通道將重新打開。\n\n\n\n 額外的殼溫傳感器負(fù)責(zé)保護(hù)整塊芯片免受過溫（OVC事件）：如果殼溫觸發(fā)TCSD閾 ? VCC(AMR) = 45 V \n? 寬進(jìn)程端工作范圍VCC = 9.2至36 V \n? RDS(on) = 0.125 Ω/通道（典型值） \n? 感應(yīng)負(fù)載快速退磁VDEMAG(TYP) = VCC - 54 V \n? 每通道的進(jìn)程端工作電流 \n ?ISO808 IOUT < 0.7 A \n ?ISO808-1 IOUT < 1 A \n? 低進(jìn)程端和邏輯側(cè)供電電流 \n? 帶自動(dòng)重啟和滯回的欠電壓關(guān)斷 \n? 兼容5 V和3.3 V TTL/CMOS及MCU的I/O \n? 通用輸出啟用/禁用引腳 \n? 用于禁用IC輸出的復(fù)位功能? 較高的共模瞬態(tài)抗擾度 \n? 帶短路保護(hù);

ST

意法半導(dǎo)體

DISCONTINUED PRODUCT. No longer recommended for new design.

TI

德州儀器

Galvanic isolated octal high-side power solid state relay for high inductive loads

Features ? VCC(AMR) = 45 V ? Wide process side op. range VCC = 9.2 to 36 V ? RDS(on) = 0.125 Ω per channel (TYP) ? Fast demagnetization of inductive loads VDEMAG(TYP) = VCC - 54 V ? Per channel process side op. current – ISO808 IOUT

文件：1.73599 Mbytes 頁數(shù)：38 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Galvanic isolated octal high-side power solid state relay with SPI interface for high inductive loads

Features ? VCC(AMR) = 45 V ? Wide process side op. range VCC = 9.2 to 36 V ? RDS(on) = 0.125 Ω per channel (TYP) ? Fast demagnetization of inductive loads VDEMAG(TYP) = VCC - 54 V ? Per channel process side op. current – ISO808A IOUT

文件：1.7236 Mbytes 頁數(shù)：38 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Galvanic isolated octal high-side power solid state relay with SPI interface for high inductive loads

Features ? VCC(AMR) = 45 V ? Wide process side op. range VCC = 9.2 to 36 V ? RDS(on) = 0.125 Ω per channel (TYP) ? Fast demagnetization of inductive loads VDEMAG(TYP) = VCC - 54 V ? Per channel process side op. current – ISO808A IOUT

文件：1.7236 Mbytes 頁數(shù)：38 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Galvanic isolated octal high-side power solid state relay with SPI interface for high inductive loads

Features ? VCC(AMR) = 45 V ? Wide process side op. range VCC = 9.2 to 36 V ? RDS(on) = 0.125 Ω per channel (TYP) ? Fast demagnetization of inductive loads VDEMAG(TYP) = VCC - 54 V ? Per channel process side op. current – ISO808A IOUT

文件：1.7236 Mbytes 頁數(shù)：38 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Galvanic isolated octal high-side power solid state relay with SPI interface for high inductive loads

Features ? VCC(AMR) = 45 V ? Wide process side op. range VCC = 9.2 to 36 V ? RDS(on) = 0.125 Ω per channel (TYP) ? Fast demagnetization of inductive loads VDEMAG(TYP) = VCC - 54 V ? Per channel process side op. current – ISO808A IOUT

文件：1.7236 Mbytes 頁數(shù)：38 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Galvanic isolated octal high-side power solid state relay for high inductive loads

Features ? VCC(AMR) = 45 V ? Wide process side op. range VCC = 9.2 to 36 V ? RDS(on) = 0.125 Ω per channel (TYP) ? Fast demagnetization of inductive loads VDEMAG(TYP) = VCC - 54 V ? Per channel process side op. current – ISO808 IOUT

文件：1.73599 Mbytes 頁數(shù)：38 Pages

STMICROELECTRONICS

意法半導(dǎo)體