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          首頁(yè) >ISL73096EH>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          ISL73096EH

          Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays

          Features ? Electrically screened to SMD # 5962-07218 ? QML qualified per MIL-PRF-38535 requirements ? Radiation tolerance - High dose rate (50-300rad(Si)/s). . . . . . . . . . . 100krad(Si) - Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . 50krad(Si)* - SEL immune . . . . . . . . . .

          文件:475 Kbytes 頁(yè)數(shù):11 Pages

          RENESAS

          瑞薩

          ISL73096EHVF

          Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays

          Features ? Electrically screened to SMD # 5962-07218 ? QML qualified per MIL-PRF-38535 requirements ? Radiation tolerance - High dose rate (50-300rad(Si)/s). . . . . . . . . . . 100krad(Si) - Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . 50krad(Si)* - SEL immune . . . . . . . . . .

          文件:475 Kbytes 頁(yè)數(shù):11 Pages

          RENESAS

          瑞薩

          ISL73096EHVX

          Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays

          Features ? Electrically screened to SMD # 5962-07218 ? QML qualified per MIL-PRF-38535 requirements ? Radiation tolerance - High dose rate (50-300rad(Si)/s). . . . . . . . . . . 100krad(Si) - Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . 50krad(Si)* - SEL immune . . . . . . . . . .

          文件:475 Kbytes 頁(yè)數(shù):11 Pages

          RENESAS

          瑞薩

          ISL73096EH

          抗輻射超高頻 NPN/PNP 晶體管陣列

          The ISL73096, ISL73127 and ISL73128 are radiation hardened bipolar transistor arrays. The ISL73096 consists of three NPN transistors and two PNP transistors on a common substrate. The ISL73127 consists of five NPN transistors on a common substrate. The ISL73128 consists of five PNP transistors on a ? Electrically screened to SMD # 5962-07218 \n? Radiation tolerance \n? Low dose rate (0.01rad(Si)/s): 50krad(Si)* \n? NPN gain bandwidth product (FT: 8GHz (typ) \n? NPN early voltage (VA): 50V (typ) \n? PNP current gain (hFE): 60 (typ) \n? Noise figure (50Ω) at 1GHz: 3.5dB (typ) \n? Collector-to-co;

          Renesas

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          技術(shù)參數(shù)

          • PNP Transistors (#):

            2

          • NPN Gain Bandwidth Product (GHz):

            8

          • PNP Gain Bandwidth Product (GHz):

            5.5

          • Noise figure (50Ω) at 1GHz (dB):

            3.5

          • Supply Voltage (V):

            -15 - 15

          • High Dose Rate (HDR) (krad (Si)):

            100

          • Low Dose Rate (LDR) (krad (Si)):

            50

          • DLA SMD:

            5962F0721804V9A

          • SMD URL:

            5962-07218

          • Pkg. Class:

            V

          • Qualification Level:

            QML Class V (Space)

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          2447
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          INTERSIL
          26+
          BGA
          21530
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          Renesas Electronics
          2022+
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          8600
          全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷(xiāo)
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          20
          10000
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          24+
          NA
          10021
          只做原裝正品現(xiàn)貨 歡迎來(lái)電查詢15919825718
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          INTERSIL
          25+
          160
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          RENESAS
          22+
          SOP
          6000
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          24+
          con
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          查現(xiàn)貨到京北通宇商城
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          H
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          更多ISL73096EH供應(yīng)商 更新時(shí)間2026-1-19 15:04:00
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