Radiation Hardened Low-Side GaN FET Driver

Features ? Wide operating voltage range of 4.5V to 13.2V ? Up to 14.7V logic inputs (regardless of VDD level) ? Inverting and non-inverting inputs ? Optimized to drive enhancement mode GaN FETs ? Internal 4.5V regulated gate drive voltage ? Independent outputs for adjustable turn-on/turn-of

文件：1.11304 Mbytes 頁數(shù)：20 Pages

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Radiation Hardened Low-Side GaN FET Driver

Features ? Wide operating voltage range of 4.5V to 13.2V ? Up to 14.7V logic inputs (regardless of VDD level) ? Inverting and non-inverting inputs ? Optimized to drive enhancement mode GaN FETs ? Internal 4.5V regulated gate drive voltage ? Independent outputs for adjustable turn-on/turn-of

文件：1.11304 Mbytes 頁數(shù)：20 Pages

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Radiation Hardened Low-Side GaN FET Driver

Features ? Wide operating voltage range of 4.5V to 13.2V ? Up to 14.7V logic inputs (regardless of VDD level) ? Inverting and non-inverting inputs ? Optimized to drive enhancement mode GaN FETs ? Internal 4.5V regulated gate drive voltage ? Independent outputs for adjustable turn-on/turn-of

文件：1.11304 Mbytes 頁數(shù)：20 Pages

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Radiation Hardened Low Side GaN FET Driver

The ISL70040SEH and ISL73040SEH are low side drivers designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. The ISL70040SEH operates with a supply voltage from 4.5V to 13.2V and has both inverting (INB) and non-inverting (IN) inputs to sat ?\n? Wide operating voltage range, 4.5V to 13.2V \n? Up to 14.7V logic inputs (regardless of VDD level) \n? Inverting and non-inverting inputs \n? Optimized to drive enhancement mode GaN FETs \n? Internal 4.5V regulated gate drive voltage \n? Independent outputs for adjustable turn-on/turn-off speed;

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