SiC N-Channel MOSFET

FEATURES ·Drain Source Voltage -VDSS= 650V(Min) · Static Drain-Source On-Resistance -RDS(on) = 24mΩ(Max)@VGS= 10V ·Very fast and robust intrinsic body diode ·Extremely low gate charge and input capacitances APPLICATIONS ·Power supply for renewable energy systems ·High frequency DC-DC conve

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ISC

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2.95V to 6V Input, 3A Output, 2MHz, Synchronous Step-Down Converter

General Description The RT8079 is a high efficiency step-down converter and capable of delivering 3A output current over a wide input voltage range from 2.95V to 6V. The RT8079 provides accurate regulation for a variety of loads with ±3 accuracy. For reducing inductor size, it provides up

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RICHTEK

立锜科技

Programmable voltage and current linear battery management chip

文件：1.02465 Mbytes 頁(yè)數(shù)：7 Pages

SHOUDING

首鼎

Magnet Wire, #26 Sol BC, Polyester/Amide-imide Polymer Ins

Product Description Magnet Wire, 26AWG (Solid) Bare Copper, Polyester/Amide-imide Polymer Insulation, CLASS 200 MW 35-C

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BELDEN

百通

Dual 260 MHz Gain = 2.0 & 2.2 Buffer

PRODUCT DESCRIPTION The AD8079 is a dual, low power, high speed buffer designed to operate on ±5 V supplies. The AD8079’s pinout offers excellent input and output isolation compared to the traditional dual amplifier pin configuration. With two ac ground pins separating both the inputs and outputs

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AD

亞德諾

Dual 260 MHz Gain = 2.0 & 2.2 Buffer

文件：288.67 Kbytes 頁(yè)數(shù)：12 Pages

AD

亞德諾