isc Silicon NPN Power Transistor

文件：353.78 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

isc Silicon PNP Power Transistor

文件：354.37 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Silicon N-Channel MOS FET

Features ? High breakdown voltage (VDSS = 1500V) ? High speed switching ? Low drive current ? No secondary breakdown ? Suitable for switchingregulator Application High speed power switching

文件：48.65 Kbytes 頁數(shù)：10 Pages

HITACHIHitachi Semiconductor

日立日立公司

VARIABLE CAPACITANCE DIODE

DESCRIPTION The KV1835E is a variable capacitance diode designed for UHF applications. The KV1835E is available in a very small URD Surface Mount Package. FEATURES ■ Very Small URD Surface Mount Package ■ Very Low Operating Voltage (1 to 4 V) ■ Large Capacitance Ratio (A = 2.8 minimum) ■ Ex

文件：24.22 Kbytes 頁數(shù)：4 Pages

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