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首頁 >ISB35>規(guī)格書列表

型號	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
ISB35	文件：78.15 Kbytes Page：2 Pages	Telecommunications 文件：78.15 Kbytes 頁數(shù)：2 Pages	ISOCOM 英國安數(shù)光	ISOCOM
ISB35000	文件：345.59 Kbytes Page：15 Pages	HCMOS STRUCTURED ARRAY GENERAL DESCRIPTION The ISB35000 array series uses a high performance, low voltage, triple level metal, HCMOS 0.5 micron process to achieve sub-nanosecond internal speeds while offering very low power dissipation and high noise immunity. The potential total gate count ranges above 1 million equiv 文件：345.59 Kbytes 頁數(shù)：15 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
ISB35083	文件：345.59 Kbytes Page：15 Pages	HCMOS STRUCTURED ARRAY GENERAL DESCRIPTION The ISB35000 array series uses a high performance, low voltage, triple level metal, HCMOS 0.5 micron process to achieve sub-nanosecond internal speeds while offering very low power dissipation and high noise immunity. The potential total gate count ranges above 1 million equiv 文件：345.59 Kbytes 頁數(shù)：15 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
ISB35130	文件：345.59 Kbytes Page：15 Pages	HCMOS STRUCTURED ARRAY GENERAL DESCRIPTION The ISB35000 array series uses a high performance, low voltage, triple level metal, HCMOS 0.5 micron process to achieve sub-nanosecond internal speeds while offering very low power dissipation and high noise immunity. The potential total gate count ranges above 1 million equiv 文件：345.59 Kbytes 頁數(shù)：15 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
ISB35166	文件：345.59 Kbytes Page：15 Pages	HCMOS STRUCTURED ARRAY GENERAL DESCRIPTION The ISB35000 array series uses a high performance, low voltage, triple level metal, HCMOS 0.5 micron process to achieve sub-nanosecond internal speeds while offering very low power dissipation and high noise immunity. The potential total gate count ranges above 1 million equiv 文件：345.59 Kbytes 頁數(shù)：15 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
ISB35208	文件：345.59 Kbytes Page：15 Pages	HCMOS STRUCTURED ARRAY GENERAL DESCRIPTION The ISB35000 array series uses a high performance, low voltage, triple level metal, HCMOS 0.5 micron process to achieve sub-nanosecond internal speeds while offering very low power dissipation and high noise immunity. The potential total gate count ranges above 1 million equiv 文件：345.59 Kbytes 頁數(shù)：15 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
ISB35279	文件：345.59 Kbytes Page：15 Pages	HCMOS STRUCTURED ARRAY GENERAL DESCRIPTION The ISB35000 array series uses a high performance, low voltage, triple level metal, HCMOS 0.5 micron process to achieve sub-nanosecond internal speeds while offering very low power dissipation and high noise immunity. The potential total gate count ranges above 1 million equiv 文件：345.59 Kbytes 頁數(shù)：15 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
ISB35389	文件：345.59 Kbytes Page：15 Pages	HCMOS STRUCTURED ARRAY GENERAL DESCRIPTION The ISB35000 array series uses a high performance, low voltage, triple level metal, HCMOS 0.5 micron process to achieve sub-nanosecond internal speeds while offering very low power dissipation and high noise immunity. The potential total gate count ranges above 1 million equiv 文件：345.59 Kbytes 頁數(shù)：15 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
ISB35484	文件：345.59 Kbytes Page：15 Pages	HCMOS STRUCTURED ARRAY GENERAL DESCRIPTION The ISB35000 array series uses a high performance, low voltage, triple level metal, HCMOS 0.5 micron process to achieve sub-nanosecond internal speeds while offering very low power dissipation and high noise immunity. The potential total gate count ranges above 1 million equiv 文件：345.59 Kbytes 頁數(shù)：15 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
ISB35666	文件：345.59 Kbytes Page：15 Pages	HCMOS STRUCTURED ARRAY GENERAL DESCRIPTION The ISB35000 array series uses a high performance, low voltage, triple level metal, HCMOS 0.5 micron process to achieve sub-nanosecond internal speeds while offering very low power dissipation and high noise immunity. The potential total gate count ranges above 1 million equiv 文件：345.59 Kbytes 頁數(shù)：15 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS

詳細(xì)參數(shù)

型號：
ISB35
制造商：
STMICROELECTRONICS
制造商全稱：
STMicroelectronics
功能描述：
HCMOS STRUCTURED ARRAY

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市豪邁興電子有限公司	ISB35	Isocom	24+	NA	5825	公司原廠原裝現(xiàn)貨假一罰十!特價出售!強(qiáng)勢庫存!	詢價
深圳市信佳源電子有限公司	ISB35	ISOCOM	2011+	DIP SOP6	20000	原裝現(xiàn)貨	詢價
深圳市科芯源微電子有限公司	ISB35	ISOCOM	25+	DIPSOP	65248	百分百原裝現(xiàn)貨實(shí)單必成	詢價
深圳市創(chuàng)盛芯科技有限公司	ISB35	ISOCOM	25+	DIP SOP6	20000	全新原裝正品支持含稅	詢價
貿(mào)澤芯城（深圳）電子科技有限公司	ISB35G	ISOCOM	23+		123864	原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種	詢價
京海半導(dǎo)體(深圳)有限公司	ISB40	Isocom	25+	DIP6	10000	原裝現(xiàn)貨假一罰十	詢價
深圳市賽美科科技有限公司	ISB623000B	SEIKOEPSO		NA	8560	一級代理原裝正品假一罰十價格優(yōu)勢長期供貨	詢價
深圳市英卓爾科技有限公司	ISB623000C	SEIKOEPSON	20+	QFP	500	樣品可出,優(yōu)勢庫存歡迎實(shí)單	詢價
深圳市威爾健半導(dǎo)體有限公司	ISB623000C	SEIKO/精工	23+	TQFP	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價
深圳市晨豪科技有限公司	ISB623000C	SEIKO/精工	23+	TQFP	89630	當(dāng)天發(fā)貨全新原裝現(xiàn)貨	詢價

更多ISB35供應(yīng)商更新時間2026-1-19 15:10:00

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