isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·High DC Current Gain- : hFE= 100(Min)@ (VCE= 2V, IC= 3A) ·Low Saturation Voltage- : VCE(sat)= 0.3V(Max)@ (IC= 8A, IB= 0.4A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA

文件：374.69 Kbytes 頁(yè)數(shù)：3 Pages

ISC

無(wú)錫固電

isc Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) ·High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V, IC= -3A) ·Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -8A, IB= -0.4A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation A

文件：374.92 Kbytes 頁(yè)數(shù)：3 Pages

ISC

無(wú)錫固電

Silicon N Channel MOS FET High Speed Power Switching

Features ? Low on-resistance RDS(on)= 6 m?typ. ? Low drive current ? 4 V gate drive device can be driven from 5 V source

文件：52.09 Kbytes 頁(yè)數(shù)：10 Pages

HITACHIHitachi Semiconductor

日立日立公司

2.7 ??3.5 GHz 100 W GaN Power Amplifier

文件：778.88 Kbytes 頁(yè)數(shù)：19 Pages

QORVO

威訊聯(lián)合

2.7 ??3.5 GHz 100 W GaN Power Amplifier

文件：778.88 Kbytes 頁(yè)數(shù)：19 Pages

QORVO

威訊聯(lián)合