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          首頁 >IS67>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IS67WVC1M16EALL

          16Mb Async/Page/Burst CellularRAM 1.5

          Features ? Single device supports asynchronous , page, and burst operation ? Mixed Mode supports asynchronous write and synchronous read operation ? Dual voltage rails for optional performance ? ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V ? CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V ? Asynchronous mode

          文件:1.88886 Mbytes 頁數(shù):68 Pages

          ISSI

          矽成半導(dǎo)體

          IS67WVC1M16EALL-7010BLA1

          16Mb Async/Page/Burst CellularRAM 1.5

          Features ? Single device supports asynchronous , page, and burst operation ? Mixed Mode supports asynchronous write and synchronous read operation ? Dual voltage rails for optional performance ? ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V ? CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V ? Asynchronous mode

          文件:1.88886 Mbytes 頁數(shù):68 Pages

          ISSI

          矽成半導(dǎo)體

          IS67WVC1M16ECLL

          16Mb Async/Page/Burst CellularRAM 1.5

          Features ? Single device supports asynchronous , page, and burst operation ? Mixed Mode supports asynchronous write and synchronous read operation ? Dual voltage rails for optional performance ? ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V ? CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V ? Asynchronous mode

          文件:1.88886 Mbytes 頁數(shù):68 Pages

          ISSI

          矽成半導(dǎo)體

          IS67WVC1M16ECLL-7010BLA1

          16Mb Async/Page/Burst CellularRAM 1.5

          Features ? Single device supports asynchronous , page, and burst operation ? Mixed Mode supports asynchronous write and synchronous read operation ? Dual voltage rails for optional performance ? ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V ? CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V ? Asynchronous mode

          文件:1.88886 Mbytes 頁數(shù):68 Pages

          ISSI

          矽成半導(dǎo)體

          IS67WVC4M16EALL

          64Mb Async/Page/Burst CellularRAM 1.5

          Features ? Single device supports asynchronous , page, and burst operation ? Mixed Mode supports asynchronous write and synchronous read operation ? Dual voltage rails for optional performance ? ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V ? CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V ? Asynchronous mode

          文件:1.88959 Mbytes 頁數(shù):68 Pages

          ISSI

          矽成半導(dǎo)體

          IS67WVC4M16EALL-7010BLA1

          64Mb Async/Page/Burst CellularRAM 1.5

          Features ? Single device supports asynchronous , page, and burst operation ? Mixed Mode supports asynchronous write and synchronous read operation ? Dual voltage rails for optional performance ? ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V ? CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V ? Asynchronous mode

          文件:1.88959 Mbytes 頁數(shù):68 Pages

          ISSI

          矽成半導(dǎo)體

          IS67WVC4M16ECLL

          64Mb Async/Page/Burst CellularRAM 1.5

          Features ? Single device supports asynchronous , page, and burst operation ? Mixed Mode supports asynchronous write and synchronous read operation ? Dual voltage rails for optional performance ? ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V ? CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V ? Asynchronous mode

          文件:1.88959 Mbytes 頁數(shù):68 Pages

          ISSI

          矽成半導(dǎo)體

          IS67WVC4M16ECLL-7010BLA1

          64Mb Async/Page/Burst CellularRAM 1.5

          Features ? Single device supports asynchronous , page, and burst operation ? Mixed Mode supports asynchronous write and synchronous read operation ? Dual voltage rails for optional performance ? ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V ? CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V ? Asynchronous mode

          文件:1.88959 Mbytes 頁數(shù):68 Pages

          ISSI

          矽成半導(dǎo)體

          IS67WVE1M16EALL

          16Mb Async/Page PSRAM

          Features ? Asynchronous and page mode interface ? Dual voltage rails for optional performance ?ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V?BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V?CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V ? Page mode read access ?InterpageRead access : 60ns, 70ns ?IntrapageRead access : 25n

          文件:902.7 Kbytes 頁數(shù):34 Pages

          ISSI

          矽成半導(dǎo)體

          IS67WVE1M16EBLL

          16Mb Async/Page PSRAM

          Features ? Asynchronous and page mode interface ? Dual voltage rails for optional performance ?ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V?BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V?CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V ? Page mode read access ?InterpageRead access : 60ns, 70ns ?IntrapageRead access : 25n

          文件:902.7 Kbytes 頁數(shù):34 Pages

          ISSI

          矽成半導(dǎo)體

          供應(yīng)商型號品牌批號封裝庫存備注價格
          23+
          68730
          ##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
          詢價
          dsi
          24+
          N/A
          6980
          原裝現(xiàn)貨,可開13%稅票
          詢價
          ISSI
          23+
          TSOP
          4850
          一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
          詢價
          ISSI
          24+/25+
          16
          原裝正品現(xiàn)貨庫存價優(yōu)
          詢價
          ISSI
          23+
          NA
          1014
          專業(yè)電子元器件供應(yīng)鏈正邁科技特價代理特價,原裝元器件供應(yīng),支持開發(fā)樣品
          詢價
          ISSI
          25+23+
          SOJ32
          31862
          絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
          詢價
          ISSI
          ROHS+Original
          NA
          1014
          專業(yè)電子元器件供應(yīng)鏈/QQ 350053121 /正納電子
          詢價
          ISSI
          25+
          BGA/165
          30000
          代理全新原裝現(xiàn)貨,價格優(yōu)勢
          詢價
          ISSI
          23+
          BGA/165
          2
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價
          ISSI
          22+
          BGA/165
          20000
          公司只做原裝 品質(zhì)保障
          詢價
          更多IS67供應(yīng)商 更新時間2026-1-19 11:01:00
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