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首頁 >IS61>規(guī)格書列表

型號(hào)	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
IS61C64B-12T	文件：44.77 Kbytes Page：9 Pages	8K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C64B is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with low power consumpt 文件：44.77 Kbytes 頁數(shù)：9 Pages	ISSI 矽成半導(dǎo)體	ISSI
IS61C64B-15J	文件：44.77 Kbytes Page：9 Pages	8K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C64B is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with low power consumpt 文件：44.77 Kbytes 頁數(shù)：9 Pages	ISSI 矽成半導(dǎo)體	ISSI
IS61C64B-15T	文件：44.77 Kbytes Page：9 Pages	8K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C64B is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with low power consumpt 文件：44.77 Kbytes 頁數(shù)：9 Pages	ISSI 矽成半導(dǎo)體	ISSI
IS61C67	文件：346.83 Kbytes Page：8 Pages	16K X 1 HIGH SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C67 is a high speed, low power, 16384-word bgy 1-bit CMOS static RAM. It is fabricated using ISSIs high performance CMOS double metal technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15ns maximum. 文件：346.83 Kbytes 頁數(shù)：8 Pages	ISSI 矽成半導(dǎo)體	ISSI
IS61C67-15N	文件：346.83 Kbytes Page：8 Pages	16K X 1 HIGH SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C67 is a high speed, low power, 16384-word bgy 1-bit CMOS static RAM. It is fabricated using ISSIs high performance CMOS double metal technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15ns maximum. 文件：346.83 Kbytes 頁數(shù)：8 Pages	ISSI 矽成半導(dǎo)體	ISSI
IS61C67-20N	文件：346.83 Kbytes Page：8 Pages	16K X 1 HIGH SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C67 is a high speed, low power, 16384-word bgy 1-bit CMOS static RAM. It is fabricated using ISSIs high performance CMOS double metal technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15ns maximum. 文件：346.83 Kbytes 頁數(shù)：8 Pages	ISSI 矽成半導(dǎo)體	ISSI
IS61C67-25N	文件：346.83 Kbytes Page：8 Pages	16K X 1 HIGH SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C67 is a high speed, low power, 16384-word bgy 1-bit CMOS static RAM. It is fabricated using ISSIs high performance CMOS double metal technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15ns maximum. 文件：346.83 Kbytes 頁數(shù)：8 Pages	ISSI 矽成半導(dǎo)體	ISSI
IS61C67-L15N	文件：346.83 Kbytes Page：8 Pages	16K X 1 HIGH SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C67 is a high speed, low power, 16384-word bgy 1-bit CMOS static RAM. It is fabricated using ISSIs high performance CMOS double metal technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15ns maximum. 文件：346.83 Kbytes 頁數(shù)：8 Pages	ISSI 矽成半導(dǎo)體	ISSI
IS61C67-L20N	文件：346.83 Kbytes Page：8 Pages	16K X 1 HIGH SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C67 is a high speed, low power, 16384-word bgy 1-bit CMOS static RAM. It is fabricated using ISSIs high performance CMOS double metal technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15ns maximum. 文件：346.83 Kbytes 頁數(shù)：8 Pages	ISSI 矽成半導(dǎo)體	ISSI
IS61C67-L25N	文件：346.83 Kbytes Page：8 Pages	16K X 1 HIGH SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61C67 is a high speed, low power, 16384-word bgy 1-bit CMOS static RAM. It is fabricated using ISSIs high performance CMOS double metal technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15ns maximum. 文件：346.83 Kbytes 頁數(shù)：8 Pages	ISSI 矽成半導(dǎo)體	ISSI

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詳細(xì)參數(shù)

型號(hào)：
IS61
制造商：
ISSI
制造商全稱：
Integrated Silicon Solution, Inc
功能描述：
64K x 16 HIGH-SPEED CMOS STATIC RAM

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
芯有半導(dǎo)體（深圳）有限公司	IS61C6416-15T	ISSI	05+	原廠原裝	4951	只做全新原裝真實(shí)現(xiàn)貨供應(yīng)	詢價(jià)
深圳市聯(lián)世界科技有限公司	IS61C6416-15T	ISSI	24+/25+		5	原裝正品現(xiàn)貨庫存價(jià)優(yōu)	詢價(jià)
深圳市福田區(qū)綠盛電子商行	IS61C6416-15T	ISSI?	2015+	SOP/DIP	19889	一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!	詢價(jià)
深圳市益百分電子有限公司	IS61C6416-15T	ISSI	TSOP44		7	全新原裝進(jìn)口自己庫存優(yōu)勢(shì)	詢價(jià)
齊創(chuàng)科技(上海,北京,青島)有限公司	IS61C6416-15T	ISSI	23+	TSOP44	8000	原裝正品,假一罰十	詢價(jià)
深圳市豪邁興電子有限公司	IS61C6416-15T	ISSI	24+	TSOP	5825	公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫存!	詢價(jià)
深圳市凌旭科技有限公司	IS61C6416-15T	ICSI	2016+	TSSOP	9000	只做原裝,假一罰十,公司可開17%增值稅發(fā)票!	詢價(jià)
諦輝(北京/上海/青島 )電子科技有限公司	IS61C6416-15T	ISSI	25+	QFN	18000	原廠直接發(fā)貨進(jìn)口原裝	詢價(jià)
上海專毅電子科技有限公司	IS61C6416-15T	ISSI	17+	TSOP44	9988	只做原裝進(jìn)口,自己庫存	詢價(jià)
深圳市壹芯創(chuàng)科技有限公司	IS61C6416-15T	ISSI	22+	TQFP	5000	全新原裝現(xiàn)貨!自家?guī)齑?	詢價(jià)

更多IS61供應(yīng)商更新時(shí)間2026-1-23 9:16:00

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