512K x 32Bits x 2Banks Mobile DDR SDRAM

Features ? JEDEC standard 1.8V power supply ? Two internal banks for concurrent operation ? MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8, 16) - Burst type (sequential & interleave) ? Fully differential clock inputs (CK, /CK) ? All inputs except dat

文件：1.81523 Mbytes 頁數(shù)：42 Pages

ISSI

矽成半導(dǎo)體

512K x 32Bits x 2Banks Mobile DDR SDRAM

Features ? JEDEC standard 1.8V power supply ? Two internal banks for concurrent operation ? MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8, 16) - Burst type (sequential & interleave) ? Fully differential clock inputs (CK, /CK) ? All inputs except dat

文件：1.81523 Mbytes 頁數(shù)：42 Pages

ISSI

矽成半導(dǎo)體

512K x 32Bits x 2Banks Mobile DDR SDRAM

Features ? JEDEC standard 1.8V power supply ? Two internal banks for concurrent operation ? MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8, 16) - Burst type (sequential & interleave) ? Fully differential clock inputs (CK, /CK) ? All inputs except dat

文件：1.81523 Mbytes 頁數(shù)：42 Pages

ISSI

矽成半導(dǎo)體

Mobile DDR SDRAM

·Double-data rate\n·Four internal banks with bank controls\n·Programmable Burst Length and CAS Latency\n·Power Savings with:- Partial Array Self Refresh (PASR)- Temperature Compenstate Self Refresh- Selectable Output Driver Strength- Deep Power Down\n·Long term support

ISSI

矽成半導(dǎo)體

動態(tài)隨機存取存儲器 32M, 1.8V, M-DDR 1Mx32, 166Mhz, RoHS

ISSI

矽成半導(dǎo)體

動態(tài)隨機存取存儲器 32M, 1.8V, M-DDR 1Mx32, 166Mhz, RoHS

ISSI

矽成半導(dǎo)體

Package：90-TFBGA；包裝：管件 類別：集成電路（IC） 存儲器 描述：IC DRAM 32MBIT PARALLEL 90TFBGA

ISSI, Integrated Silicon Solution Inc

Package：90-TFBGA；包裝：管件 類別：集成電路（IC） 存儲器 描述：IC DRAM 32MBIT PARALLEL 90TFBGA

ISSI, Integrated Silicon Solution Inc

Package：90-TFBGA；包裝：托盤 類別：集成電路（IC） 存儲器 描述：IC DRAM 32MBIT PARALLEL 90TFBGA

ISSI, Integrated Silicon Solution Inc