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          首頁(yè) >IS43DR16640B-3DBL-TR>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          IS43DR16640B-3DBL-TR

          Package:84-TFBGA;包裝:卷帶(TR) 類別:集成電路(IC) 存儲(chǔ)器 描述:IC DRAM 1GBIT PARALLEL 84TWBGA

          ISSI, Integrated Silicon Solution Inc

          ISSI, Integrated Silicon Solution Inc

          IS43DR16640B-3DBI

          1Gb (x8, x16) DDR2 SDRAM

          FEATURES ? Clock frequency up to 400MHz ? 8 internal banks for concurrent operation ? 4‐bit prefetch architecture ? Programmable CAS Latency: 3, 4, 5, 6 and 7 ? Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6 ? Write Latency = Read Latency‐1 ? Programmable Burst Sequence: Sequential

          文件:548.81 Kbytes 頁(yè)數(shù):28 Pages

          ISSI

          矽成半導(dǎo)體

          IS43DR16640B-3DBL

          1Gb (x8, x16) DDR2 SDRAM

          FEATURES ? Clock frequency up to 400MHz ? 8 internal banks for concurrent operation ? 4‐bit prefetch architecture ? Programmable CAS Latency: 3, 4, 5, 6 and 7 ? Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6 ? Write Latency = Read Latency‐1 ? Programmable Burst Sequence: Sequential

          文件:548.81 Kbytes 頁(yè)數(shù):28 Pages

          ISSI

          矽成半導(dǎo)體

          IS43DR16640B-3DBLI

          1Gb (x8, x16) DDR2 SDRAM

          FEATURES ? Clock frequency up to 400MHz ? 8 internal banks for concurrent operation ? 4‐bit prefetch architecture ? Programmable CAS Latency: 3, 4, 5, 6 and 7 ? Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6 ? Write Latency = Read Latency‐1 ? Programmable Burst Sequence: Sequential

          文件:548.81 Kbytes 頁(yè)數(shù):28 Pages

          ISSI

          矽成半導(dǎo)體

          產(chǎn)品屬性

          • 產(chǎn)品編號(hào):

            IS43DR16640B-3DBL-TR

          • 制造商:

            ISSI, Integrated Silicon Solution Inc

          • 類別:

            集成電路(IC) > 存儲(chǔ)器

          • 包裝:

            卷帶(TR)

          • 存儲(chǔ)器類型:

            易失

          • 存儲(chǔ)器格式:

            DRAM

          • 技術(shù):

            SDRAM - DDR2

          • 存儲(chǔ)容量:

            1Gb(64M x 16)

          • 存儲(chǔ)器接口:

            并聯(lián)

          • 寫周期時(shí)間 - 字,頁(yè):

            15ns

          • 電壓 - 供電:

            1.7V ~ 1.9V

          • 工作溫度:

            0°C ~ 70°C(TA)

          • 安裝類型:

            表面貼裝型

          • 封裝/外殼:

            84-TFBGA

          • 供應(yīng)商器件封裝:

            84-TWBGA(8x12.5)

          • 描述:

            IC DRAM 1GBIT PARALLEL 84TWBGA

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          ISSI, Integrated Silicon Solut
          21+
          -
          5280
          進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng)
          詢價(jià)
          ISSI, Integrated Silicon Solut
          24+
          84-TWBGA(8x12.5)
          56200
          一級(jí)代理/放心采購(gòu)
          詢價(jià)
          ISSI
          1931+
          N/A
          493
          加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物
          詢價(jià)
          ISSI
          25+
          BGA-84
          2500
          就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
          詢價(jià)
          ISSI
          2022+
          原廠原包裝
          8600
          全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷
          詢價(jià)
          ISSI, Integrated Silicon Solu
          23+
          84-TWBGA8x12.5
          7300
          專注配單,只做原裝進(jìn)口現(xiàn)貨
          詢價(jià)
          ISSI Integrated Silicon Solut
          25+
          84-TFBGA
          9350
          獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
          詢價(jià)
          ISSI
          25+
          電聯(lián)咨詢
          7800
          公司現(xiàn)貨,提供拆樣技術(shù)支持
          詢價(jià)
          ISSI
          24+
          BGA84
          66500
          只做全新原裝進(jìn)口現(xiàn)貨
          詢價(jià)
          ISSI
          25+
          TWBGA-84
          58788
          百分百原裝現(xiàn)貨 實(shí)單必成 歡迎詢價(jià)
          詢價(jià)
          更多IS43DR16640B-3DBL-TR供應(yīng)商 更新時(shí)間2026-1-20 17:22:00
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