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          首頁(yè) >IS35>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          IS35ML04G084

          3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

          FEATURES ? Flexible & Efficient Memory Architecture - Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell ? Highest performance - Read Performance -

          文件:1.49971 Mbytes 頁(yè)數(shù):66 Pages

          ISSI

          矽成半導(dǎo)體

          IS35ML04G084-TLA1

          3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

          FEATURES ? Flexible & Efficient Memory Architecture - Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell ? Highest performance - Read Performance -

          文件:1.49971 Mbytes 頁(yè)數(shù):66 Pages

          ISSI

          矽成半導(dǎo)體

          IS35ML04G084-TLA2

          3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

          FEATURES ? Flexible & Efficient Memory Architecture - Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell ? Highest performance - Read Performance -

          文件:1.49971 Mbytes 頁(yè)數(shù):66 Pages

          ISSI

          矽成半導(dǎo)體

          IS35ML04G084-TLE

          3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

          FEATURES ? Flexible & Efficient Memory Architecture - Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell ? Highest performance - Read Performance -

          文件:1.49971 Mbytes 頁(yè)數(shù):66 Pages

          ISSI

          矽成半導(dǎo)體

          IS35ML04G084-TLI

          3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE

          FEATURES ? Flexible & Efficient Memory Architecture - Organization: 512Mb x8 - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - Memory Cell: 1bit/Memory Cell ? Highest performance - Read Performance -

          文件:1.49971 Mbytes 頁(yè)數(shù):66 Pages

          ISSI

          矽成半導(dǎo)體

          IS35MW04G084

          1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND

          FEATURES ? Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8 /256Mb x16 - X8: - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - Memory Cell Arr

          文件:2.37765 Mbytes 頁(yè)數(shù):67 Pages

          ISSI

          矽成半導(dǎo)體

          IS35MW04G084-TLA1

          1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND

          FEATURES ? Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8 /256Mb x16 - X8: - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - Memory Cell Arr

          文件:2.37765 Mbytes 頁(yè)數(shù):67 Pages

          ISSI

          矽成半導(dǎo)體

          IS35MW04G084-TLA2

          1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND

          FEATURES ? Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8 /256Mb x16 - X8: - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - Memory Cell Arr

          文件:2.37765 Mbytes 頁(yè)數(shù):67 Pages

          ISSI

          矽成半導(dǎo)體

          IS35MW04G084-TLE

          1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND

          FEATURES ? Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8 /256Mb x16 - X8: - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - Memory Cell Arr

          文件:2.37765 Mbytes 頁(yè)數(shù):67 Pages

          ISSI

          矽成半導(dǎo)體

          IS35MW04G084-TLI

          1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND

          FEATURES ? Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8 /256Mb x16 - X8: - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - Memory Cell Arr

          文件:2.37765 Mbytes 頁(yè)數(shù):67 Pages

          ISSI

          矽成半導(dǎo)體

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          ISSI
          25+
          SOP-8
          880000
          明嘉萊只做原裝正品現(xiàn)貨
          詢價(jià)
          ISSI
          2447
          C0603
          100500
          一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
          詢價(jià)
          ISSI
          21+
          標(biāo)準(zhǔn)封裝
          220
          保證原裝正品,需要聯(lián)系張小姐 13544103396 微信同號(hào)
          詢價(jià)
          ISSI
          20+
          *
          220
          詢價(jià)
          ISSI
          2023+
          SMD
          5905
          安羅世紀(jì)電子只做原裝正品貨
          詢價(jià)
          ISSI
          2407+
          IC
          30098
          全新原裝!倉(cāng)庫(kù)現(xiàn)貨,大膽開價(jià)!
          詢價(jià)
          ISSI
          170
          詢價(jià)
          ISSI
          24+
          con
          170
          現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價(jià)格
          詢價(jià)
          ISSI
          24+
          n/a
          25836
          新到現(xiàn)貨,只做原裝進(jìn)口
          詢價(jià)
          ISSI
          23+
          TSOP
          10000
          原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
          詢價(jià)
          更多IS35供應(yīng)商 更新時(shí)間2026-1-21 17:02:00
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