| 型號(hào) | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRLU024 | Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.? The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s 文件：1.38953 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRLU024 | Power MOSFET FEATURES ? Dynamic dV/dt rating ? Surface-mount (IRLR024, SiHLR024) ? Straight lead (IRLU024, SiHLU024) ? Available in tape and reel ? Logic-level gate drive ? RDS(on) specified at VGS = 4 V and 5 V ? Fast switching ? Material categorization: for definitions of compliance please see www.v 文件：472.42 Kbytes 頁數(shù)：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRLU024 | Power MOSFET 文件：1.2042 Mbytes 頁數(shù)：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRLU024 | Power MOSFET 文件：1.2042 Mbytes 頁數(shù)：10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRLU024 | Power MOSFET 文件：463.68 Kbytes 頁數(shù)：11 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRLU024 | Power MOSFET Dynamic dV/dt rating\nSurface-mount (IRLR024, SiHLR024)\nStraight lead (IRLU024, SiHLU024); | Vishay 威世 | Vishay | |
HEXFET Power MOSFET Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel 文件：162.2 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
Logic-Level Gate Drive Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel 文件：173.02 Kbytes 頁數(shù)：11 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel 文件：304.82 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.? The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s 文件：1.38953 Mbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
技術(shù)參數(shù)
- OPN：
IRLU024NPBF
- Qualification：
Non-Automotive
- Package name：
IPAK
- VDS max：
55 V
- RDS (on) @10V max：
65 m?
- RDS (on) @4.5V max：
110 m?
- ID @25°C max：
17 A
- QG typ @4.5V：
10 nC
- Polarity：
N
- VGS(th) min：
1 V
- VGS(th) max：
2 V
- VGS(th)：
1.5 V
- Technology：
IR MOSFET?
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
25+ |
TO252 |
20300 |
VISHAY/威世原裝特價(jià)IRLU024即刻詢購立享優(yōu)惠#長期有貨 |
詢價(jià) | ||
IR |
12+ |
TO-251 |
15000 |
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。 |
詢價(jià) | ||
IR |
23+ |
TO-251 |
11846 |
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價(jià) | ||
IR/VISH |
24+ |
65230 |
詢價(jià) | ||||
VISHAY |
25+ |
TO-251 |
1675 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
IR |
23+ |
TO-251 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
IR |
25+ |
TO-251 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
Vishay Siliconix |
22+ |
TO2513 Short Leads IPak TO251A |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
IR |
21+ |
TO-251 |
10 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
Vishay Siliconix |
2022+ |
TO-251-3 短引線,IPak,TO-251A |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷 |
詢價(jià) |
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