| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRLU014 | Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st 文件:2.16738 Mbytes 頁(yè)數(shù):8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRLU014 | Power MOSFET FEATURES ? Dynamic dV/dt rating ? Surface-mount (IRLR014, SiHLR014) ? Straight lead (IRLU014, SiHLU014) ? Available in tape and reel ? Logic-level gate drive ? RDS(on) specified at VGS = 4 V and 5 V ? Fast switching ? Material categorization: for definitions of compliance please see www.v 文件:822.02 Kbytes 頁(yè)數(shù):13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRLU014 | HEXFET POWER MOSFET
文件:180.89 Kbytes 頁(yè)數(shù):6 Pages | IRF | IRF | |
IRLU014 | Power MOSFET 文件:2.24711 Mbytes 頁(yè)數(shù):10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRLU014 | Power MOSFET 文件:2.24711 Mbytes 頁(yè)數(shù):10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRLU014 | Power MOSFET Dynamic dV/dt rating\nSurface-mount (IRLR014, SiHLR014)\nStraight lead (IRLU014, SiHLU014); | Vishay 威世 | Vishay | |
IRLU014 | HEXFET POWER MOSFET | Infineon 英飛凌 | Infineon | |
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p 文件:110.86 Kbytes 頁(yè)數(shù):10 Pages | IRF | IRF | ||
HEXFET POWER MOSFET ( VDSS = 55V , RDS(on) = 0.14廓 , ID = 10A ) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p 文件:281.42 Kbytes 頁(yè)數(shù):11 Pages | IRF | IRF | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st 文件:2.16738 Mbytes 頁(yè)數(shù):8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
詳細(xì)參數(shù)
- 型號(hào):
IRLU014
- 功能描述:
MOSFET N-Chan 60V 7.7 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-251 |
2501 |
原廠原裝正品 |
詢價(jià) | ||
IR |
2024+ |
N/A |
70000 |
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢價(jià) | ||
IR |
2450+ |
TO-251 |
9850 |
只做原裝正品現(xiàn)貨或訂貨假一賠十! |
詢價(jià) | ||
IR |
24+ |
TO-251 |
422 |
詢價(jià) | |||
VIS |
23+ |
TO-251 |
10000 |
原裝正品,假一罰十 |
詢價(jià) | ||
IR |
17+ |
TO-220 |
6200 |
詢價(jià) | |||
IR |
12+ |
TO-251 |
15000 |
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。 |
詢價(jià) | ||
IR |
23+ |
TO-251 |
8650 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣! |
詢價(jià) | ||
IR |
23+ |
TO-220 |
10000 |
專做原裝正品,假一罰百! |
詢價(jià) | ||
IR原裝 |
25+23+ |
TO-251 |
22916 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) |
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