Advanced Power MOSFET

BVDSS = 200 V RDS(on) = 0.18 Ω ID = 9.8 A FEATURES ● Logic-Level Gate Drive ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current : 10 μA (Max.) @ VDS = 200V ● Lower RDS(ON) :

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FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

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ISC

無(wú)錫固電

功率 MOSFET，N 溝道，邏輯電平，A-FET，200 V，9.8 A，180 m?，TO-220F

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, ad withstand high energy pulse in the av ? 9.8 A, 200 VrDS(ON) = 180 mΩ @ VGS = 5 V\n? Low Gate Charge (Typ. 40 nC)\n? Low Crss (Typ. 95 pF)\n? Fast Switching Speed\n? 100% AvalancheTested\n? Improved dv/dt Capability\n? Logic-Level Gate Drive;

ONSEMI

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isc N-Channel MOSFET Transistor

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ISC

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Advanced Power MOSFET

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FAIRCHILD

仙童半導(dǎo)體

N-CHANNEL MOSFET

ID 18.0 A VDSS 200 V Rdson （@Vgs=10V） 0.18Ω Qg 47 nC FEATURES Low gate charge Low Crss (typical 48pF ) Fast switching 100 avalanche tested Improved dv/dt capability RoHS product APPLICATIONS High efficiency switch mode power supplies Electronic lamp balla

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