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          首頁 >IRLR024>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRLR024N

          HEXFET Power MOSFET

          Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel

          文件:162.2 Kbytes 頁數(shù):10 Pages

          IRF

          IRLR024N

          N-Channel MOSFET Transistor

          ? DESCRITION ? Fast Switching ? FEATURES ? Static drain-source on-resistance: RDS(on)≤65m? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

          文件:334.74 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          IRLR024NPBF

          HEXFET Power MOSFET

          Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel

          文件:304.82 Kbytes 頁數(shù):10 Pages

          IRF

          IRLR024NTRL

          Logic-Level Gate Drive

          Description Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel

          文件:173.02 Kbytes 頁數(shù):11 Pages

          IRF

          IRLR024PBF

          Power MOSFET

          DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.? The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

          文件:1.38953 Mbytes 頁數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRLR024TR

          Power MOSFET

          DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.? The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

          文件:1.38953 Mbytes 頁數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRLR024TRPBF

          Power MOSFET

          DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.? The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The s

          文件:1.38953 Mbytes 頁數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRLR024Z

          AUTOMOTIVE MOSFET

          Description Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp

          文件:215.66 Kbytes 頁數(shù):11 Pages

          IRF

          IRLR024ZPBF

          AUTOMOTIVE MOSFET

          Description Specifically designed for Automotive applications, this HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impr

          文件:281.89 Kbytes 頁數(shù):12 Pages

          IRF

          IRLR024_09

          Power MOSFET

          文件:1.2042 Mbytes 頁數(shù):10 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          技術(shù)參數(shù)

          • OPN:

            IRLR024NTRLPBF/IRLR024NTRPBF

          • Qualification:

            Non-Automotive

          • Package name:

            DPAK/DPAK

          • VDS max:

            55 V

          • RDS (on) @10V max:

            65 m?/65 m?

          • RDS (on) @4.5V max:

            110 m?/110 m?

          • ID @25°C max:

            17 A/17 A

          • QG typ @4.5V:

            10 nC/10 nC

          • Polarity:

            N

          • VGS(th) min:

            1 V/1 V

          • VGS(th) max:

            2 V/2 V

          • VGS(th):

            1.5 V/1.5 V

          • Technology:

            IR MOSFET?/IR MOSFET?

          供應(yīng)商型號品牌批號封裝庫存備注價格
          IR
          23+
          TO-252
          6500
          原廠原裝正品
          詢價
          IR
          2450+
          TO-252
          9850
          只做原裝正品現(xiàn)貨或訂貨假一賠十!
          詢價
          IR
          06+
          原廠原裝
          4208
          只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
          詢價
          IR
          23+
          TO-252
          7500
          絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購!
          詢價
          IR
          25+
          TO-252
          399
          百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
          詢價
          IR
          24+
          TO-252
          5825
          公司原廠原裝現(xiàn)貨假一罰十!特價出售!強(qiáng)勢庫存!
          詢價
          IR
          17+
          TO-252
          6200
          100%原裝正品現(xiàn)貨
          詢價
          IR
          25+
          TO-252
          2987
          只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電!
          詢價
          IR
          23+
          TO-252
          11846
          一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
          詢價
          IR
          23+
          TO-252
          10000
          專做原裝正品,假一罰百!
          詢價
          更多IRLR024供應(yīng)商 更新時間2026-1-20 9:43:00
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