iMOTION? Modular Application Design Kit

Eval-M1-CM610N3 is an evaluation board formotor drive applications based on a 3-phase IPM. Combined in a kit with one of the available MADK control board options, it demonstrates Infineon's IPM technology formotor drives. The kit demonstrates Infineon’s IPM technology formotor drives. Main feat

文件：731.27 Kbytes 頁數(shù)：26 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/1g/marking.html">1G**；Package：SOT-23；HEXFET Power MOSFET

Description These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET? power MOSFETs are well known for, provi

文件：126.69 Kbytes 頁數(shù)：9 Pages

IRF

絲?。?a target="_blank" title="Marking" href="/1g/marking.html">1G；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET

文件：784.65 Kbytes 頁數(shù)：4 Pages

UMW

友臺半導(dǎo)體

N-Channel 20-V(D-S) MOSFET

General FEATURE ●TrenchFET Power MOSFET ●Lead free product is acquired ●Surface mount package APPLICATION ●Load Switch for Portable Devices ●DC/DC Converte

文件：3.05403 Mbytes 頁數(shù)：5 Pages

TUOFENG

拓鋒半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/1g/marking.html">1G；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter

文件：559.87 Kbytes 頁數(shù)：4 Pages

EVVOSEMI

翊歐

絲?。?a target="_blank" title="Marking" href="/1g/marking.html">1G**；Package：SOT-23；N-Channel MOSFET

文件：1.46526 Mbytes 頁數(shù)：5 Pages

KEXIN

科信電子

采用 Micro 3 封裝的 20V 單 N 溝道功率 MOSFET

\n優(yōu)勢:\n? 符合 RoHS\n? 具有業(yè)內(nèi)先進的品質(zhì)\n? 快速開關(guān)\n? 纖薄外形（小于1.1毫米）\n? SOT-23 封裝;

Infineon

英飛凌

HEXFET Power MOSFET

These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET? power MOSFETs are well known for, provides the designe

文件：180.15 Kbytes 頁數(shù)：9 Pages

IRF

HEXFET

Power MOSFET

Description These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET? power MOSFETs are well known for, provi

文件：132.27 Kbytes 頁數(shù)：9 Pages

IRF

HEXFET Power MOSFET

文件：180.71 Kbytes 頁數(shù)：8 Pages

IRF