| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：158.5 Kbytes 頁數(shù)：9 Pages | IRF | IRF | ||
Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：165.67 Kbytes 頁數(shù)：9 Pages | IRF | IRF | ||
絲?。?a target="_blank" title="Marking" href="/ll014n/marking.html">LL014N；Package：SOT-223；55V N-Channel MOSFET Benefits VDS (V) =55V ID =2.0A (VGS = 10V) RDS(ON) 文件：1.03976 Mbytes 頁數(shù)：8 Pages | EVVOSEMI 翊歐 | EVVOSEMI | ||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：261.26 Kbytes 頁數(shù)：9 Pages | IRF | IRF | ||
Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：165.67 Kbytes 頁數(shù)：9 Pages | IRF | IRF | ||
Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：262.4 Kbytes 頁數(shù)：9 Pages | IRF | IRF | ||
絲?。?a target="_blank" title="Marking" href="/ll014n/marking.html">LL014N；Package：SOT223；‘N-Channel Enhancement Mode Power MOSFET GENERAL FEATURES 60V, 4A, Ros = B5TIQ. @Vis = 10V. Reson = 10070 @Vos = 45V. 1 High dense ce design for extremely low Rosco Rugged and reat. Lead re products acquired 507.223 package. 文件：1.82994 Mbytes 頁數(shù)：5 Pages | TECHPUBLIC 臺舟電子 | TECHPUBLIC | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniq 文件：959.24 Kbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniq 文件：959.24 Kbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniq 文件：959.24 Kbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
技術(shù)參數(shù)
- OPN：
IRLL014NTRPBF
- Qualification：
Non-Automotive
- Package name：
SOT223
- VDS max：
55 V
- RDS (on) @10V max：
140 m?
- RDS (on) @4.5V max：
280 m?
- ID @25°C max：
2.8 A
- QG typ @10V：
9.5 nC
- Special Features：
Small Power
- Polarity：
N
- VGS(th) min：
1 V
- VGS(th) max：
2 V
- VGS(th)：
1.5 V
- Technology：
IR MOSFET?
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
IR |
NEW |
SOT-223 |
18657 |
全新原裝正品,價格優(yōu)勢,長期供應(yīng),量大可訂 |
詢價 | ||
VISHAY/威世 |
2025+ |
SOT-223 |
5000 |
原裝進(jìn)口價格優(yōu) 請找坤融電子! |
詢價 | ||
IR |
25+ |
SOT-223 |
3500 |
福安甌為您提供真芯庫存,真誠服務(wù) |
詢價 | ||
IR |
24+ |
SOT-223 |
13700 |
新進(jìn)庫存/原裝 |
詢價 | ||
IOR |
05/06+ |
SOT223 |
168 |
全新原裝100真實現(xiàn)貨供應(yīng) |
詢價 | ||
IR |
24+ |
原廠封裝 |
4241 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IOR |
0705+ |
SOT223-3 |
80 |
原裝現(xiàn)貨海量庫存歡迎咨詢 |
詢價 | ||
IOR |
22+ |
SOT223-3 |
2500 |
全新原裝現(xiàn)貨!自家?guī)齑? |
詢價 | ||
IOR |
25+ |
2987 |
絕對全新原裝現(xiàn)貨供應(yīng)! |
詢價 |
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