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          首頁(yè) >IRLD024>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          IRLD024

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple combina

          文件:1.59251 Mbytes 頁(yè)數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRLD024

          Power MOSFET(Vdss=60V, Rds(on)=0.10ohm, Id=2.5A)

          Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ? Dynamic dV/dt Rating ? For Automatic Insertion ? End Stackable ? Logic-Level Gate Drive ?

          文件:170.74 Kbytes 頁(yè)數(shù):6 Pages

          IRF

          IRLD024

          Power MOSFET

          文件:1.6983 Mbytes 頁(yè)數(shù):9 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRLD024

          Power MOSFET

          文件:1.6983 Mbytes 頁(yè)數(shù):9 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRLD024

          Power MOSFET

          文件:1.70331 Mbytes 頁(yè)數(shù):9 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRLD024

          Power MOSFET(Vdss=60V, Rds(on)=0.10ohm, Id=2.5A)

          Infineon

          英飛凌

          IRLD024PBF

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple combina

          文件:1.59251 Mbytes 頁(yè)數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRLD024_10

          Power MOSFET

          文件:1.6983 Mbytes 頁(yè)數(shù):9 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRLD024_17

          Power MOSFET

          文件:1.70331 Mbytes 頁(yè)數(shù):9 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRLD024_V01

          Power MOSFET

          文件:835.57 Kbytes 頁(yè)數(shù):9 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          技術(shù)參數(shù)

          • 漏源電壓(Vdss):

            60V

          • 柵源極閾值電壓(最大值):

            2V @ 250uA

          • 漏源導(dǎo)通電阻(最大值):

            100 mΩ @ 1.5A

          • 類型:

            N 溝道

          • 功率耗散(最大值):

            1.3W

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          IR
          24+/25+
          100
          原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
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          IR
          24+
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          1870
          原裝現(xiàn)貨假一罰十
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          INTERNATIONA
          05+
          原廠原裝
          4238
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          IOR
          24+
          DIP-4P
          125
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          IR
          25+
          DIP-4
          25
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          IR
          DIP4
          2360
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          IR
          17+
          DIP-4
          6200
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          ir
          24+
          N/A
          6980
          原裝現(xiàn)貨,可開(kāi)13%稅票
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          IR
          23+
          65480
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          2447
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          更多IRLD024供應(yīng)商 更新時(shí)間2026-1-20 14:30:00
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