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          首頁 >IRLD014>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRLD014

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple combina

          文件:1.72964 Mbytes 頁數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRLD014

          POWER MOSFEET

          Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4-pin DIP package is a low cost machine-insertiable case style which can be stacked in multi

          文件:172.88 Kbytes 頁數(shù):6 Pages

          IRF

          IRLD014

          Power MOSFET

          文件:845.54 Kbytes 頁數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRLD014

          POWER MOSFEET

          Infineon

          英飛凌

          IRLD014PBF

          HEXFET Power MOSFET

          Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4-pin DIP package is a low cost machine-insertiable case style which can be stacked in multi

          文件:1.76807 Mbytes 頁數(shù):8 Pages

          IRF

          IRLD014PBF

          Power MOSFET

          DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple combina

          文件:1.72964 Mbytes 頁數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRLD014_V01

          Power MOSFET

          文件:845.54 Kbytes 頁數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRLD014PBF

          Power MOSFET

          文件:845.54 Kbytes 頁數(shù):8 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          IRLD014PBF

          MOS(場效應(yīng)管)

          Vishay

          威世

          技術(shù)參數(shù)

          • 漏源電壓(Vdss):

            60V

          • 柵源極閾值電壓(最大值):

            2V @ 250uA

          • 漏源導(dǎo)通電阻(最大值):

            200 mΩ @ 1A,5V

          • 類型:

            N 溝道

          • 功率耗散(最大值):

            1.3W

          供應(yīng)商型號品牌批號封裝庫存備注價格
          INTERNATIONA
          05+
          原廠原裝
          4238
          只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
          詢價
          IR
          24+
          原廠封裝
          1816
          原裝現(xiàn)貨假一罰十
          詢價
          IOR
          24+
          DIP-4P
          100
          詢價
          IR
          23+
          DIP-4
          8560
          受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
          詢價
          IR
          23+
          HD-1
          9888
          專做原裝正品,假一罰百!
          詢價
          IR
          23+
          65480
          詢價
          VISHAY
          25+
          DIP-4
          3000
          就找我吧!--邀您體驗(yàn)愉快問購元件!
          詢價
          IR
          25+
          DIP4
          10000
          原裝現(xiàn)貨假一罰十
          詢價
          Vishay Siliconix
          22+
          4DIP
          9000
          原廠渠道,現(xiàn)貨配單
          詢價
          IR
          25+
          DIP-4
          3200
          全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售
          詢價
          更多IRLD014供應(yīng)商 更新時間2026-1-20 16:11:00
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