| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：158.09 Kbytes 頁(yè)數(shù)：10 Pages | IRF | IRF | ||
Power MOSFET(Vdss=30V, Rds(on)=12mohm, Id=64A) Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr 文件：125.18 Kbytes 頁(yè)數(shù)：10 Pages | IRF | IRF | ||
HEXFET? Power MOSFET Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr 文件：648.75 Kbytes 頁(yè)數(shù)：10 Pages | IRF | IRF | ||
5-BIT PROGRAMMABLE SYNCHRONOUS BUCK, NON-SYNCHRONOUS,ADJUSTABLE LDO AND 200mA ON-BOARD LDO DESCRIPTION The IRU3007 controller IC is specifically designed to meet Intel specification for Pentium II? microprocessor applications as well as the next generation of P6 family processors. The IRU3007 provides a single chip controller IC for the Vcore, LDO controller for GTL+ and an internal 20 文件：100.38 Kbytes 頁(yè)數(shù)：17 Pages | IRF | IRF | ||
Power MOSFET(Vdss=30V, Rds(on)=12mohm, Id=64A) Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr 文件：125.18 Kbytes 頁(yè)數(shù)：10 Pages | IRF | IRF | ||
HEXFET? Power MOSFET Description Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr 文件：648.75 Kbytes 頁(yè)數(shù)：10 Pages | IRF | IRF | ||
Advanced Process Technology 文件：190.11 Kbytes 頁(yè)數(shù)：9 Pages | IRF | IRF | ||
ADVANCED PROCESS TECHNOLOGY 文件：190.11 Kbytes 頁(yè)數(shù)：9 Pages | IRF | IRF | ||
ADVANCED PROCESS TECHNOLOGY 文件：190.11 Kbytes 頁(yè)數(shù)：9 Pages | IRF | IRF | ||
絲?。?a target="_blank" title="Marking" href="/d2pak/marking.html">D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor 文件：263.16 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC |
技術(shù)參數(shù)
- Package?：
TO-220
- VDS?max：
30.0V
- RDS (on)(@10V)?max：
12.0m?
- RDS (on)?max：
12.0m?
- RDS (on)(@4.5V)?max：
16.0m?
- Polarity?：
N
- ID (@ TC=100°C)?max：
40.0A
- ID ?max：
40.0A
- ID (@ TC=25°C)?max：
56.0A
- Ptot?max：
83.0W
- QG?：
22.0nC?
- Mounting?：
THT
- Tj?max：
175.0°C
- VGS?max：
16.0V
- Qgd?：
11.3nC?
- RthJC?max：
1.8K/W
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
2450+ |
TO-220 |
9850 |
只做原裝正品現(xiàn)貨或訂貨假一賠十! |
詢價(jià) | ||
IR |
24+ |
TO-220-3 |
8866 |
詢價(jià) | |||
ir |
06+ |
TO-220 |
15000 |
原裝庫(kù)存 |
詢價(jià) | ||
IR |
1415+ |
TO-263 |
28500 |
全新原裝正品,優(yōu)勢(shì)熱賣 |
詢價(jià) | ||
IR |
24+ |
原廠封裝 |
2000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
IR |
16+ |
TO-220 |
10000 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
IOR |
24+ |
DIT3P |
6980 |
原裝現(xiàn)貨,可開(kāi)13%稅票 |
詢價(jià) | ||
IR |
23+ |
TO220 |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
IR |
25+ |
PLCC-44 |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢價(jià) | ||
IR |
99+ |
TO220 |
67 |
原裝現(xiàn)貨海量庫(kù)存歡迎咨詢 |
詢價(jià) |
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