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          首頁 >IRL2>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          IRL2203NSTRLPBF

          Advanced Process Technology

          Description Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

          文件:295.79 Kbytes 頁數(shù):10 Pages

          IRF

          IRL2203S

          Power MOSFET(Vdss=30V, Rds(on)=0.007ohm, Id=100A??

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

          文件:173.01 Kbytes 頁數(shù):9 Pages

          IRF

          IRL2505

          Power MOSFET

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

          文件:178.32 Kbytes 頁數(shù):10 Pages

          IRF

          IRL2505L

          Power MOSFET

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

          文件:178.32 Kbytes 頁數(shù):10 Pages

          IRF

          IRL2505LPBF

          HEXFET Power MOSFET

          Coming Soon. If you have some information on related parts, please share useful information by adding links below.

          文件:288.6 Kbytes 頁數(shù):10 Pages

          IRF

          IRL2505S

          Power MOSFET

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

          文件:178.32 Kbytes 頁數(shù):10 Pages

          IRF

          IRL2505S/L

          Power MOSFET

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

          文件:178.32 Kbytes 頁數(shù):10 Pages

          IRF

          IRL2505SPBF

          HEXFET Power MOSFET

          Coming Soon. If you have some information on related parts, please share useful information by adding links below.

          文件:288.6 Kbytes 頁數(shù):10 Pages

          IRF

          IRL2505SSLASHL

          Power MOSFET

          Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

          文件:178.32 Kbytes 頁數(shù):10 Pages

          IRF

          IRL2505STRLPBF

          HEXFET Power MOSFET

          Coming Soon. If you have some information on related parts, please share useful information by adding links below.

          文件:288.6 Kbytes 頁數(shù):10 Pages

          IRF

          技術(shù)參數(shù)

          • Package?:

            TO-220

          • VDS?max:

            30.0V

          • RDS (on)(@10V)?max:

            7.0m?

          • RDS (on)?max:

            7.0m?

          • RDS (on)(@4.5V)?max:

            10.0m?

          • Polarity?:

            N

          • ID (@ TC=100°C)?max:

            71.0A

          • ID ?max:

            71.0A

          • ID (@ TC=25°C)?max:

            100.0A

          • Ptot?max:

            130.0W

          • QG?:

            40.0nC?

          • Mounting?:

            THT

          • RthJC?max:

            1.2K/W

          • Tj?max:

            175.0°C

          • VGS?max:

            16.0V

          • Qgd?:

            22.0nC?

          供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
          9000
          原裝現(xiàn)貨價(jià)格有優(yōu)勢量多可發(fā)貨
          詢價(jià)
          IR
          13+
          TO-220
          7258
          原裝分銷
          詢價(jià)
          IR
          05+
          TO-220
          5000
          全新原裝 絕對有貨
          詢價(jià)
          IR
          12+
          TO-263
          15000
          全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。
          詢價(jià)
          IR
          24+
          D2-Pak
          8866
          詢價(jià)
          IR
          24+
          原廠封裝
          2850
          原裝現(xiàn)貨假一罰十
          詢價(jià)
          IR
          24+/25+
          304
          原裝正品現(xiàn)貨庫存價(jià)優(yōu)
          詢價(jià)
          IRA
          23+
          SOT-23
          5000
          原裝正品,假一罰十
          詢價(jià)
          ir
          24+
          N/A
          6980
          原裝現(xiàn)貨,可開13%稅票
          詢價(jià)
          IR
          25+
          TO-220
          10
          百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
          詢價(jià)
          更多IRL2供應(yīng)商 更新時(shí)間2026-1-21 12:43:00
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