| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRGPH50 | INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=25A) Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of 文件：267.29 Kbytes 頁(yè)數(shù)：6 Pages | IRF | IRF | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=25A) Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of 文件：267.29 Kbytes 頁(yè)數(shù)：6 Pages | IRF | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=25A) Description Co-packaged IGBTs are a natural extension of International Rectifiers well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power s 文件：431.64 Kbytes 頁(yè)數(shù)：8 Pages | IRF | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=23A) Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of 文件：255.49 Kbytes 頁(yè)數(shù)：6 Pages | IRF | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=23A) Description Co-packaged IGBTs are a natural extension of International Rectifiers well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications. These new short 文件：1.35285 Mbytes 頁(yè)數(shù)：8 Pages | IRF | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=33A) Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of 文件：96.84 Kbytes 頁(yè)數(shù)：2 Pages | IRF | IRF | ||
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes 頁(yè)數(shù)：35 Pages | IRF | IRF | ||
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes 頁(yè)數(shù)：35 Pages | IRF | IRF | ||
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes 頁(yè)數(shù)：35 Pages | IRF | IRF | ||
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes 頁(yè)數(shù)：35 Pages | IRF | IRF |
詳細(xì)參數(shù)
- 型號(hào)：
IRGPH50
- 制造商：
IRF
- 制造商全稱(chēng)：
International Rectifier
- 功能描述：
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=25A)
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
TO |
6000 |
十年配單,只做原裝 |
詢(xún)價(jià) | ||
IR |
23+ |
TO |
8000 |
只做原裝現(xiàn)貨 |
詢(xún)價(jià) | ||
IR |
23+ |
TO |
7000 |
詢(xún)價(jià) | |||
IR |
25+ |
TO |
12300 |
獨(dú)立分銷(xiāo)商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證 |
詢(xún)價(jià) | ||
IR |
25+ |
TO-3P |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢(xún)價(jià) | ||
IR |
24+ |
TO-247AC-3 |
8866 |
詢(xún)價(jià) | |||
IR |
15+ |
TO-247 |
11560 |
全新原裝,現(xiàn)貨庫(kù)存,長(zhǎng)期供應(yīng) |
詢(xún)價(jià) | ||
INTERNATIONA |
05+ |
原廠原裝 |
11441 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢(xún)價(jià) | ||
IR |
16+ |
TO-3P |
10000 |
全新原裝現(xiàn)貨 |
詢(xún)價(jià) | ||
IR |
23+ |
TO-3P |
5000 |
原裝正品,假一罰十 |
詢(xún)價(jià) |
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