INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)

Fast CoPack IGBT Features ? Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). ? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 ? IGBT co-packaged with HEXFREDTM ultrafast, ultra-sof

文件：214.12 Kbytes 頁(yè)數(shù)：10 Pages

IRF

Fit Rate / Equivalent Device Hours

文件：98.39 Kbytes 頁(yè)數(shù)：35 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features ? Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). ? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 ? IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-pa

文件：354.79 Kbytes 頁(yè)數(shù)：11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：348.19 Kbytes 頁(yè)數(shù)：10 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：348.19 Kbytes 頁(yè)數(shù)：10 Pages

IRF

600V Fast 1-8 kHz Copack IGBT in a TO-247AC package

600V IGBT 與超快 8-25 kHz 軟恢復(fù)二極管聯(lián)合封裝到 TO-247AC 封裝中\(zhòng)n ? ? 對(duì)中等工作頻率進(jìn)行了優(yōu)化\n? 參數(shù)分布更緊湊，效率更高\(yùn)n? 與 HEXFREDTM 超快、超軟恢復(fù)反并聯(lián)二極管聯(lián)合封裝的 IGBT，在橋配置中使用\n? 行業(yè)標(biāo)準(zhǔn) TO-247AC 封裝\n? 無(wú)鉛\n\n\n優(yōu)勢(shì):\n? IGBT 提供可實(shí)現(xiàn)的出色效率\n? 針對(duì)特定應(yīng)用條件進(jìn)行過優(yōu)化的 IGBT\n? HEXFRED 二極管與 IGBT 并用優(yōu)化。恢復(fù)特性最小化，對(duì)緩沖的要求更少甚至不需要。\n? 旨在“直接替代”同等行業(yè)內(nèi)標(biāo)準(zhǔn)的第三代 IR IGBT\n?;

Infineon

英飛凌

Package：TO-247-3；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 49A 160W TO247AC

INFINEON

英飛凌

Package：TO-247-3；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 49A TO247AC

INFINEON

英飛凌