INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

Short Circuit Rated UltraFast IGBT Features ? High short circuit rating optimized for motor control, tsc =10μs, @360V VCE (start), TJ = 125°C, VGE = 15V ? Combines low conduction losses with high switching speed ? Tighter parameter distribution and higher efficiency than previous gen

文件：178.84 Kbytes 頁數(shù)：10 Pages

IRF

INSULATED GATE BIPOALR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features ? High short circuit rating optimized for motor control, tsc =10μs, @360V VCE (start), TJ = 125°C, VGE = 15V ? Combines low conduction losses with high switching speed ? Tighter parameter distribution and higher efficiency than previous generations ? IGBT co-packaged

文件：345.26 Kbytes 頁數(shù)：11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：346.22 Kbytes 頁數(shù)：11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：346.22 Kbytes 頁數(shù)：11 Pages

IRF

600V UltraFast 8-25 kHz Copack IGBT in a TO-247AC package

600V IGBT 與超快8-25 kHz 軟恢復二極管聯(lián)合封裝到 TO-247AC 封裝中。 ? 對電機控制的高短路額定值優(yōu)化，tsc =10μs, @360V VCE（啟動），TJ=125°C, VGE=15V\n? 低通態(tài)損耗與高開關速度相結合\n? 參數(shù)分布更緊湊，效率更高\n? 與 HEXFREDTM超快、超軟恢復反并聯(lián)二極管聯(lián)合封裝的 IGBT\n? 無鉛\n\n優(yōu)勢:\n? IGBT 提供可行的高功率密度電機控制\n? HEXFREDTM 二極管經(jīng)過與 IGBT 并用優(yōu)化，將噪聲、EMI 和開關損耗降低;

Infineon

英飛凌

Package：TO-247-3；包裝：管件 類別：分立半導體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 28A 100W TO247AC

INFINEON

英飛凌

Package：TO-247-3；包裝：卷帶（TR） 類別：分立半導體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 28A 100W TO247AC

INFINEON

英飛凌