首頁 >IRG4BC20FD>規(guī)格書列表
| 型號(hào) | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRG4BC20FD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A) Features ? Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). ? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 ? IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery 文件：222.29 Kbytes 頁數(shù)：10 Pages | IRF | IRF | |
IRG4BC20FD | Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes 頁數(shù)：35 Pages | IRF | IRF | |
INSULATED GATEBIPOLAR TRANSISTOR WITH ULTRAFAST SOFR RECOVERY DIODE
文件：318.04 Kbytes 頁數(shù)：11 Pages | IRF | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A) Features ? Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). ? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 ? IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-pa 文件：222.11 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features ? Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). ? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 ? IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-pa 文件：298.44 Kbytes 頁數(shù)：12 Pages | IRF | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A) Features ? Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). ? Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 ? IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-pa 文件：222.11 Kbytes 頁數(shù)：10 Pages | IRF | IRF | ||
OPTIMIZED FOR MEDIUM OPERATING 文件：319.01 Kbytes 頁數(shù)：11 Pages | IRF | IRF | ||
OPTIMIZED FOR MEDIUM OPERATING 文件：319.01 Kbytes 頁數(shù)：11 Pages | IRF | IRF | ||
IRG4BC20FD | 600V 快速 1-8 kHz Copack IGBT，采用 TO-220AB 封裝 | Infineon 英飛凌 | Infineon | |
IRG4BC20FD | Package：TO-220-3；包裝：管件 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 16A 60W TO220AB | INFINEON 英飛凌 | INFINEON |
產(chǎn)品屬性
- 產(chǎn)品編號(hào)：
IRG4BC20FD
- 制造商：
Infineon Technologies
- 類別：
分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單
- 包裝：
管件
- 不同?Vge、Ic 時(shí)?Vce(on)（最大值）：
2V @ 15V，9A
- 開關(guān)能量：
250μJ（開），640μJ（關(guān)）
- 輸入類型：
標(biāo)準(zhǔn)
- 25°C 時(shí) Td（開/關(guān)）值：
43ns/240ns
- 測(cè)試條件：
480V，9A，50 歐姆，15V
- 工作溫度：
-55°C ~ 150°C（TJ）
- 安裝類型：
通孔
- 封裝/外殼：
TO-220-3
- 供應(yīng)商器件封裝：
TO-220AB
- 描述：
IGBT 600V 16A 60W TO220AB
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
2015+ |
TO-220AB |
12500 |
全新原裝,現(xiàn)貨庫存長(zhǎng)期供應(yīng) |
詢價(jià) | ||
IR |
24+ |
TO-220AB |
8866 |
詢價(jià) | |||
INFINEON |
25+ |
TO-220 |
3000 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價(jià) | ||
IR |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
IR |
25+ |
TO-220 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
Infineon Technologies |
22+ |
TO220AB |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
IR |
99+ |
TO-220 |
110 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
Infineon Technologies |
24+ |
原裝 |
5000 |
原裝正品,提供BOM配單服務(wù) |
詢價(jià) | ||
Infineon Technologies |
2022+ |
TO-220AB |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷 |
詢價(jià) |
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