N-CHANNEL POWER MOSFETS

文件：197.79 Kbytes 頁數(shù)：5 Pages

SAMSUNG

三星

Power Field Effect Transistors

TMOS POWER FETs 46 and 51 AMPERE rDS(on) = 0.028 OHM 50 VOLTS rDS(on) = 0.035 OHM

文件：135.61 Kbytes 頁數(shù)：2 Pages

MOTOROLA

摩托羅拉

Power MOSFET

FEATURES ? Dynamic dV/dt rating ? 175 °C operating temperature ? Fast switching ? Ease of paralleling ? Simple drive requirements ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are R

文件：793.87 Kbytes 頁數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS ■ TYPICAL RDS(on) = 0.022 ? ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCH

文件：181.67 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-CHANNEL POWER MOSFETS

文件：847.01 Kbytes 頁數(shù)：5 Pages

ARTSCHIP

N-Channel MOSFET uses advanced trench technology

文件：1.01453 Mbytes 頁數(shù)：3 Pages

DOINGTER

杜因特

SEMICONDUCTORS

文件：2.43533 Mbytes 頁數(shù)：31 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

isc Silicon NPN Power Transistor

文件：61.29 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Power MOSFET

文件：1.48056 Mbytes 頁數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.62528 Mbytes 頁數(shù)：9 Pages

VISHAYVishay Siliconix

威世威世科技公司