N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS

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SEME-LAB

MOSFETs and JFETs

TT Electronics

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POWER MOSFET THRU-HOLE (TO-257AA) HEXFET? MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-e

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POWER MOSFET N-CHANNEL(BVdss=500V, Rd(on)=1.5ohm, Id=4.5A)

POWER MOSFET THRU-HOLE (TO-257AA) HEXFET? MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-e

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N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package.

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Simple Drive Requirements

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Simple Drive Requirements

文件：217.04 Kbytes 頁數(shù)：7 Pages

IRF

N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS

文件：18.44 Kbytes 頁數(shù)：2 Pages

SEME-LAB

N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS

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SEME-LAB

HiRel MOSFETs

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Infineon

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