Ultra Low On-Resistance

Description The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. ● Ultr

文件：942.95 Kbytes 頁數(shù)：10 Pages

KERSEMI

Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=17A??

文件：178.33 Kbytes 頁數(shù)：10 Pages

IRF

絲印：IPAK；Package：TO-251；Isc N-Channel MOSFET Transistor

文件：319.75 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：4.03053 Mbytes 頁數(shù)：10 Pages

KERSEMI

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：401.32 Kbytes 頁數(shù)：10 Pages

IRF

Ultra Low On-Resistance

文件：406.05 Kbytes 頁數(shù)：11 Pages

IRF

Ultra Low On-Resistance

文件：4.00212 Mbytes 頁數(shù)：10 Pages

KERSEMI

采用 I-Pak 封裝的 55V 單 N 通道功率 MOSFET

\n優(yōu)勢:\n? 符合 RoHS\n? 低 RDS(on)\n? 具有業(yè)內(nèi)先進(jìn)的品質(zhì)\n? 動態(tài)的dv/dt額定值\n? 快速開關(guān)\n? 完全雪崩額定值\n? 175°C 的工作溫度;

Infineon

英飛凌