isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -8.3A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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isc P-Channel MOSFET Transistor

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SEME-LAB

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -9.3A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.31Ω(Max)@VGS= -10V · All Leads Isolated From Case DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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POWER MOSFET THRU-HOLE (TO-257AA)100V, P-CHANNEL HEXFET? MOSFET TECHNOLOGY

Part Number RDS(on) ID Eyelets IRFY9130C 0.3 ? -11.2A Ceramic IRFY9130CM 0.3 ? -11.2A Ceramic HEXFET? MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on

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